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K - 9 Datasheets PDF Index
Manufacture | Part Number | Description | |
Toshiba Semiconductor |
K4012 | 2SK4012 TOSHIBA Field Effect T | |
Toshiba Semiconductor |
K4013 | 2SK4013 TOSHIBA Field Effect | |
Toshiba Semiconductor |
K4017 | 2SK4017 TOSHIBA Field Effect T | |
KODENSHI KOREA CORP |
K402 | Photocoupler K401 • K402 • K404 These Photoco | |
Toshiba Semiconductor |
K4021 | 2SK4021 TOSHIBA Field Effect T | |
KODENSHI KOREA CORP |
K404 | Photocoupler K401 • K402 • K404 These Photoco | |
Toshiba |
K4042 | 2SK4042 TOSHIBA Field Effect Transistor Silicon N | |
NEC |
K4057 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWI | |
NEC |
K4058 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWI | |
Unisonic Technologies |
K4059 | UNISONIC TECHNOLOGIES CO., LTD K4059 Preliminary | |
Renesas |
K4069 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWI | |
NEC |
K4070 | DATA SHEET MOS FIELD EFFECT T | |
NEC |
K4075 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWI | |
NEC |
K4078 | DATA SHEET MOS FIELD EFFECT T | |
NEC |
K4080 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4080 SWI | |
Sanyo Semicon Device |
K4085LS | Ordering number : ENA0553A 2SK4085LS SANYO Semic | |
Sanyo |
K4086LS | Ordering number : ENA0554A 2S | |
Sanyo Semicon Device |
K4087LS | Ordering number : ENA0555A 2 | |
Hitachi Semiconductor |
K409 | ||
Renesas |
K4090 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWI | |
Renesas |
K4091 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4091 SWI | |
NEC |
K4092 | DATA SHEET MOS FIELD EFFECT T | |
Renesas |
K4093 | 2SK4093 Silicon N Channel MOS FET High Speed Power | |
Sanyo Semicon Device |
K4096LS | Ordering number : ENA0774 2S | |
Sanyo Semicon Device |
K4097 | Ordering number : ENA0775 2S | |
Sanyo Semicon Device |
K4098LS | Ordering number : ENA0776 2SK | |
Infineon |
K40H1203 | IGBT HighspeedDuoPack:IGBTinTrenchandFields | |
Infineon |
K40H603 | IGBT HighspeedDuoPackIGBTinTrenchandFieldst | |
Freescale Semiconductor |
K40P100M100SF2 | Freescale Semiconductor Data Sheet: Technical Data | |
Freescale Semiconductor |
K40P100M100SF2V2 | Freescale Semiconductor Data Sheet: Advance Inform | |
Freescale Semiconductor |
K40P100M72SF1 | Freescale Semiconductor Data Sheet: Technical Data | |
Freescale Semiconductor |
K40P104M100SF2 | Freescale Semiconductor Data Sheet: Product Previe | |
Freescale Semiconductor |
K40P121M100SF2 | Freescale Semiconductor Data Sheet: Product Previe | |
Freescale Semiconductor |
K40P144M100SF2 | Freescale Semiconductor Data Sheet: Technical Data | |
Freescale Semiconductor |
K40P144M100SF2V2 | Freescale Semiconductor Data Sheet: Technical Data | |
Freescale Semiconductor |
K40P81M100SF2 | Freescale Semiconductor Data Sheet: Technical Data | |
NXP |
K40P81M100SF2V2 | Freescale Semiconductor Data Sheet: Technical Data | |
Infineon |
K40T120 | FDP52N20 / FDPF52N20T N-Channel MOSFET October 20 | |
Infineon |
K40T1202 | IKW40N120T2 TRENCHSTOP™ 2nd Generation Series L | |
Sanyo Semicon Device |
K4100LS | Ordering number : ENA0778 2S | |
Sanyo |
K4101LS | Ordering number : ENA0745 2S | |
Toshiba |
K4106 | 2SK4106 TOSHIBA Field Effect Transistor Silicon N | |
Toshiba Semiconductor |
K4107 | 2SK4107 TOSHIBA Field Effect Transistor Silicon N- | |
Toshiba Semiconductor |
K4108 | 2SK4108 TOSHIBA Field Effect Transistor Silicon N- | |
Toshiba |
K4110 | 2SK4110 TOSHIBA Field Effect Transistor Silicon N | |
Toshiba |
K4111 | 2SK4111 TOSHIBA Field Effect Transistor Silicon N | |
Toshiba |
K4112 | 2SK4112 TOSHIBA Field Effect Transistor Silicon N | |
Toshiba |
K4113 | 2SK4113 TOSHIBA Field Effect Transistor Silicon N | |
Toshiba Semiconductor |
K4115 | 2SK4115 TOSHIBA Field Effect | |
Sanyo Semicon Device |
K4119LS | Ordering number : ENA0830 2SK | |
Hitachi |
K412 | Free Datasheet / Free | |
Sanyo |
K4123LS | Ordering number : ENA0826 2SK | |
ETC |
K413 | ||
ETC |
K414 | ||
NEC |
K4145 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 | |
Renesas |
K4146 | Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT T | |
Renesas Technology |
K4150 | 2SK4150 Silicon N Channel MOS FET High Speed Power | |
Panasonic |
K4174 | Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpol | |
Sanyo |
K4181 | Ordering number : ENA0999 2SK4181 SANYO Semicond | |
Panasonic |
K4208 | Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpol | |
Renesas |
K4212 | To our customers, Old Company Name in Catalogs an | |
Renesas |
K4213 | DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 | |
Sanyo Semiconductor Corporation |
K427 | Ordering number:EN1404B N-Channel Junction Silico | |
Hitachi Semiconductor |
K429 | ||
Aeroflex |
K430 | Silicon Zener Diodes Glass Axial Leaded Low Leve | |
Knox Inc |
K430 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKA | |
Kitronix |
K430WQA-V3-F | ¶«Ý¸Ææ´´Á¦ÏÔʾÆ÷ÓÐÏÞ¹«Ë¾ w | |
Kitronix |
K430WQC-V1-F | ¶«Ý¸Ææ´´Á¦ÏÔʾÆ÷ÓÐÏÞ¹«Ë¾ w | |
ISAHAYA ELECTRONICS |
K433 | ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONI | |
Renesas |
K435 | To all our customers Regarding the change of name | |
Hitachi Semiconductor |
K439 | 2SK439 Silicon N-Channel MOS FET Application VHF | |
Toshiba |
K442 | Free Datasheet Free Da | |
Toshiba |
K447 | ||
NEC |
K459 | ||
Aeroflex |
K470 | Silicon Zener Diodes Glass Axial Leaded Low Leve | |
Knox Inc |
K470 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKA | |
ISAHAYA ELECTRONICS |
K492 | ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONI | |
Samsung |
K4A4G045WD | Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-d | |
Samsung |
K4A4G045WE | Rev. 1.6, Jan. 2017 K4A4G045WE K4A4G085WE 4Gb E-d | |
Samsung |
K4A4G085WD | Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-d | |
Samsung |
K4A4G085WE | Rev. 1.6, Jan. 2017 K4A4G045WE K4A4G085WE 4Gb E-d | |
Samsung |
K4A4G165WD | Rev. 0.5, Feb. 2014 K4A4G165WD Preliminary 4Gb D | |
Samsung |
K4A4G165WE | Rev. 1.4, Jun. 2016 K4A4G165WE 4Gb E-die DDR4 SDR | |
Toshiba |
K4A60DA | TK4A60DA TOSHIBA Field Effect Transistor Silicon N | |
Toshiba Semiconductor |
K4A60DB | TK4A60DB TOSHIBA Field Effect Transistor Silicon N | |
Samsung |
K4A8G045WB | Rev. 2.1, Feb. 2017 K4A8G045WB K4A8G085WB 8Gb B-d | |
Samsung |
K4A8G085WB | Rev. 2.1, Feb. 2017 K4A8G045WB K4A8G085WB 8Gb B-d | |
Samsung |
K4A8G165WB | Rev. 1.6, Jun. 2016 K4A8G165WB 8Gb B-die DDR4 SDR | |
Samsung |
K4A8G165WC | Rev. 1.5, Apr. 2017 K4A8G165WC 8Gb C-die DDR4 SDR | |
Samsung semiconductor |
K4B1G0446C | K4B1G04(08/16)46C 1Gb DDR3 SDRAM | |
Samsung semiconductor |
K4B1G0446D | K4B1G04(08/16)46D 1Gb DDR3 SDRAM 1Gb D-die DDR3 | |
Samsung |
K4B1G0446E | Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G164 | |
Samsung |
K4B1G0446F | Rev. 1.21, Nov. 2010 K4B1G0446F K4B1G0846F 1Gb F- | |
Samsung |
K4B1G0446G | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0446G-BCF8 | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0446G-BCH9 | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0446G-BCK0 | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0446G-BCMA | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung semiconductor |
K4B1G0846C | K4B1G04(08/16)46C 1Gb DDR3 SDRAM | |
Samsung semiconductor |
K4B1G0846D | K4B1G04(08/16)46D 1Gb DDR3 SDRAM 1Gb D-die DDR3 | |
Samsung |
K4B1G0846E | Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G164 | |
Samsung |
K4B1G0846F | Rev. 1.21, Nov. 2010 K4B1G0446F K4B1G0846F 1Gb F- | |
Samsung |
K4B1G0846G | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0846G-BCF8 | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0846G-BCH9 | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0846G-BCK0 | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung |
K4B1G0846G-BCMA | Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-d | |
Samsung semiconductor |
K4B1G1646C | K4B1G04(08/16)46C 1Gb DDR3 SDRAM | |
Samsung semiconductor |
K4B1G1646D | K4B1G04(08/16)46D 1Gb DDR3 SDRAM 1Gb D-die DDR3 | |
Samsung |
K4B1G1646E | Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G164 | |
Samsung |
K4B1G1646G | Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SD | |
Samsung |
K4B1G1646I | Rev.1.1, Mar. 2016 K4B1G1646I 1Gb I-die DDR3 SDRAM | |
Samsung |
K4B2G0446B | Rev. 1.41, Nov. 2010 K4B2G0446B K4B2G0846B K4B2G16 | |
Samsung |
K4B2G0446C | Rev. 1.31, Nov. 2010 K4B2G0446C K4B2G0846C 2Gb C- | |
Samsung semiconductor |
K4B2G0446D | Rev. 1.13, May. 2011 K4B2G0446D K4B2G0846D 2Gb D-d | |
Samsung |
K4B2G0446E | Rev. 1.01, Mar. 2012 K4B2G0446E K4B2G0846E 2Gb E- | |
Samsung |
K4B2G0446Q | Rev. 1.2, Apr. 2014 K4B2G0446Q K4B2G0846Q 2Gb Q-di | |
Samsung |
K4B2G0846B | Rev. 1.41, Nov. 2010 K4B2G0446B K4B2G0846B K4B2G16 | |
Samsung |
K4B2G0846C | Rev. 1.31, Nov. 2010 K4B2G0446C K4B2G0846C 2Gb C- | |
Samsung semiconductor |
K4B2G0846D | Rev. 1.13, May. 2011 K4B2G0446D K4B2G0846D 2Gb D-d | |
Samsung |
K4B2G0846E | Rev. 1.01, Mar. 2012 K4B2G0446E K4B2G0846E 2Gb E- | |
Samsung |
K4B2G0846F | Rev. 1.0, Feb. 2016 K4B2G0846F 2Gb F-die DDR3L SD | |
Samsung |
K4B2G0846Q | Rev. 1.2, Apr. 2014 K4B2G0446Q K4B2G0846Q 2Gb Q-di | |
Samsung |
K4B2G1646B | Rev. 1.41, Nov. 2010 K4B2G0446B K4B2G0846B K4B2G16 | |
Samsung semiconductor |
K4B2G1646C | Rev. 1.11, Nov. 2010 K4B2G164 | |
Samsung |
K4B2G1646E | Rev. 1.21, Jun. 2012 K4B2G1646E 2Gb E-die DDR3 SD | |
Samsung |
K4B2G1646F | Rev. 1.0, Feb. 2016 K4B2G1646F 2Gb F-die DDR3L SD | |
Samsung |
K4B2G1646Q | Rev. 1.01, Jan. 2014 K4B2G1646Q 2Gb Q-die DDR3L S | |
Samsung |
K4B4G0446A | Rev. 1.0, Jul. 2010 K4B4G0446A K4B4G0846A 4Gb A-d | |
Samsung |
K4B4G0446B | Rev. 1.2, Jul. 2011 K4B4G0446B K4B4G0846B 4Gb B-di | |
Samsung |
K4B4G0446C | Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-d | |
Samsung |
K4B4G0446D | Rev. 1.2, Jun. 2014 K4B4G0446D K4B4G0846D 4Gb D-di | |
Samsung |
K4B4G0446E | Rev. 1.2, Dec. 2014 K4B4G0446E K4B4G0846E 4Gb E-d | |
Samsung |
K4B4G0846A | Rev. 1.0, Jul. 2010 K4B4G0446A K4B4G0846A 4Gb A-d | |
Samsung |
K4B4G0846B | Rev. 1.2, Jul. 2011 K4B4G0446B K4B4G0846B 4Gb B-di | |
Samsung |
K4B4G0846C | Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-d | |
Samsung |
K4B4G0846D | Rev. 1.2, Jun. 2014 K4B4G0446D K4B4G0846D 4Gb D-di | |
Samsung |
K4B4G0846E | Rev. 1.2, Dec. 2014 K4B4G0446E K4B4G0846E 4Gb E-d | |
Samsung |
K4B4G1646B | Rev. 1.0, Jan. 2012 K4B4G1646B 4Gb B-die DDR3 SDR | |
Samsung |
K4B4G1646D | Rev. 1.02, Feb. 2014 K4B4G1646D 96FBGA with Lead- | |
Samsung |
K4B4G1646E | Rev. 1.0, Dec. 2014 K4B4G1646E 4Gb E-die DDR3L SD | |
Samsung |
K4B4G1646Q | Rev. 0.5, Apr. 2013 K4B4G1646Q Preliminary 4Gb Q-d | |
Samsung |
K4B8G1646B | Rev. 1.0, Feb. 2013 K4B8G1646B DDP 8Gb B-die DDR3 | |
Samsung |
K4B8G1646D | Rev. 0.9, Jan. 2016 K4B8G1646D DDP 8Gb D-die DDR3 | |
Samsung |
K4B8G1646Q | Rev. 1.0, Oct. 2013 K4B8G1646Q DDP 8Gb Q-die DDR3 | |
Samsung |
K4C560838C-TCD3 | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung |
K4C560838C-TCD4 | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung |
K4C560838C-TCDA | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung |
K4C561638C-TCD3 | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung |
K4C561638C-TCD4 | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung |
K4C561638C-TCD4000 | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung |
K4C561638C-TCDA | K4C5608/1638C 256Mb Network-DRAM 256Mb Network-D | |
Samsung semiconductor |
K4C89083AF | K4C89183AF 288Mb x18 Network | |
Samsung semiconductor |
K4C89093AF | K4C89183AF 288Mb x18 Network | |
Samsung semiconductor |
K4C89163AF | K4C89183AF 288Mb x18 Network | |
Samsung semiconductor |
K4C89183AF | K4C89183AF 288Mb x18 Network | |
Samsung semiconductor |
K4C89323AF | K4C89363AF Network-DRAM-II S | |
Samsung semiconductor |
K4C89363AF | K4C89363AF Network-DRAM-II S | |
Samsung |
K4D261638 | K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M | |
Samsung |
K4D261638F | K4D261638F 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M | |
Samsung |
K4D261638K | K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M | |
Samsung |
K4D261638K-LC40 | K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M | |
Samsung |
K4D261638K-LC50 | K4D261638K 128M GDDR SDRAM 128Mbit GDDR SDRAM 2M | |
Samsung |
K4D263238A | K4D263238A-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1 | |
Samsung |
K4D263238D | K4D263238D 128M DDR SDRAM 128Mbit DDR SDRAM 1M x | |
Samsung |
K4D263238E | K4D263238E-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM | |
Samsung |
K4D263238F | K4D263238F 128M DDR SDRAM 128Mbit DDR SDRAM 1M x | |
Samsung |
K4D263238G-GC | K4D263238G-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM | |
Samsung |
K4D263238I-UC | K4D263238I-UC 128M GDDR SDRA | |
Samsung Electronics |
K4D263238I-VC | K4D263238I-VC 128M GDDR SDRA | |
Samsung |
K4D263238M | K4D263238M 128M DDR SDRAM 128Mbit DDR SDRAM 1M x | |
Samsung semiconductor |
K4D26323GC | K4D26323QG-GC 128M GDDR SDRAM co | |
Samsung semiconductor |
K4D26323QG | K4D26323QG-GC 128M GDDR SDRAM co | |
Samsung |
K4D26323RA | * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM | |
Samsung |
K4D551638F-TC | Target Spec K4D551638F-TC 256M GDDR SDRAM 256Mbit | |
Samsung |
K4D551638H | K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Re | |
Samsung |
K4D551638H-LC40 | K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Re | |
Samsung |
K4D551638H-LC50 | K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Re | |
Samsung |
K4D553238F-JC | K4D553238F-JC 256M GDDR SDRAM 256Mbit GDDR SDRAM | |
Samsung |
K4D623238B-GC | K4D623238B-GC 64M DDR SDRAM 64Mbit DDR SDRAM 512 | |
Samsung |
K4E151611C | K4E171611C, K4E151611C K4E171612C, K4E151612C CMO | |
Samsung |
K4E151611D | K4E171611D, K4E151611D K4E171612D, K4E151612D CMO | |
Samsung |
K4E151612C | K4E171611C, K4E151611C K4E171612C, K4E151612C CMO | |
Samsung |
K4E151612D | K4E171611D, K4E151611D K4E171612D, K4E151612D CMO | |
Samsung |
K4E160411D | K4E170411D, K4E160411D K4E170412D, K4E160412D CMO | |
Samsung |
K4E160412D | K4E170411D, K4E160411D K4E170412D, K4E160412D CMO | |
Samsung |
K4E160811D | K4E170811D, K4E160811D K4E170812D, K4E160812D CMO | |
Samsung |
K4E160812D | K4E170811D, K4E160811D K4E170812D, K4E160812D CMO | |
Samsung |
K4E170411D | K4E170411D, K4E160411D K4E170412D, K4E160412D CMO | |
Samsung |
K4E170412D | K4E170411D, K4E160411D K4E170412D, K4E160412D CMO | |
Samsung |
K4E170811D | K4E170811D, K4E160811D K4E170812D, K4E160812D CMO | |
Samsung |
K4E170812D | K4E170811D, K4E160811D K4E170812D, K4E160812D CMO | |
Samsung |
K4E171611C | K4E171611C, K4E151611C K4E171612C, K4E151612C CMO | |
Samsung |
K4E171611D | K4E171611D, K4E151611D K4E171612D, K4E151612D CMO | |
Samsung |
K4E171612C | K4E171611C, K4E151611C K4E171612C, K4E151612C CMO | |
Samsung |
K4E171612D | K4E171611D, K4E151611D K4E171612D, K4E151612D CMO | |
Samsung |
K4E640412D | K4E660412D,K4E640412D CMOS DRAM 16M x 4bit CMOS | |
Samsung semiconductor |
K4E640412E | Industrial Temperature K4E660 | |
Samsung |
K4E640812B | K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS | |
Samsung |
K4E640812C | K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS D |
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