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2 - 78 Datasheets PDF Index
Manufacture | Part Number | Description | |
Microsemi Corporation |
2N7371 | TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON T | |
Microsemi Corporation |
2N7372 | 7516 Central Industrial Drive Riviera Beach, Flori | |
Microsemi Corporation |
2N7373 | 7516 Central Industrial Drive Riviera Beach, Flori | |
SSDI |
2N7375 | Sorted by IC, then VCEO Part Number mIaCx (A) 2 | |
SSDI |
2N7377 | 5 AMP NPN (continued) Sorted by IC, then VCEO Par | |
Motorola |
2N739 | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annu | |
Motorola |
2N740 | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annu | |
Intersil Corporation |
2N7400 | JANSR2N7400 8A, 200V, 0.440 O | |
Motorola |
2N741 | 41, A2N7 (GERMANIUM) CASE 22 (TO-IS) Collactor c | |
Motorola |
2N741A | 41, A2N7 (GERMANIUM) CASE 22 (TO-IS) Collactor c | |
ETC |
2N7424 | The documentation and process conversion measures | |
ETC |
2N7425 | The documentation and process conversion measures | |
ETC |
2N7426 | The documentation and process conversion measures | |
Motorola |
2N743 | 2N743 (SILICON) NPN silicon annular transistor de | |
Motorola |
2N744 | 2N744 (SILICON) CASE 22 (TO-18) Collector connect | |
International Rectifier |
2N7522 | Preliminary Data Sheet Repeti | |
Central |
2N753 | Small Signal Transistors TO-18 Case TYPE NO. DES | |
International Rectifier |
2N7581U2 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD | |
International Rectifier |
2N7588T3 | PD-96986A RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7590T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohm | |
International Rectifier |
2N7592T3 | PD-96925C RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7594T3 | PD-97193A RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7599T3 | PD-95837B RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7604U2 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFAC | |
International Rectifier |
2N7609U8 | PD-97326A RADIATION HARDENED LOGIC LEVEL POWER MO | |
International Rectifier |
2N7612M1 | PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOS | |
International Rectifier |
2N7614M1 | PD-97339 RADIATION HARDENED LOGIC LEVEL POWER MOS | |
International Rectifier |
2N7617UC | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFAC | |
International Rectifier |
2N7621T2 | PD-94695H IRHLF770Z4 2N7621T2 RADIATION HARDENED | |
International Rectifier |
2N7627UC | PD-97574 2N7627UC IRHLUC7970Z4 RADIATION HARDENED | |
International Rectifier |
2N7632UC | PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENE | |
GeneSiC |
2N7635-GA | 2N7635-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7636-GA | 2N7636-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7637-GA | 2N7637-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7638-GA | 2N7638-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7639-GA | 2N7639-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7639-GA | 2N7639-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7640-GA | 2N7640-GA Normally – OFF Silicon Carbide Juncti | |
Inchange Semiconductor |
2N80 | INCHANGE Semiconductor isc N-Channel MOSFET Transi | |
Unisonic Technologies |
2N80 | UNISONIC TECHNOLOGIES CO., LTD 2N80 2A, 800V N-CHA | |
Unisonic Technologies |
2N80Z | UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary | |
Motorola |
2N827 | 2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium | |
Motorola |
2N828 | 2N828 (GERMANIUM) CASE 22 (TO·1S) Collector conn | |
Motorola |
2N828A | 2N828 (continued) ELECTRICAL CHARACTERISTICS (cont | |
Motorola |
2N829 | 2N828 (continued) ELECTRICAL CHARACTERISTICS (cont | |
New Jersey Semi-Conductor |
2N834 | Free Datasheet / | |
Motorola |
2N834 | 8342N (SILICON) 2N835 NPN silicon epitaxial transi | |
Motorola |
2N835 | 8342N (SILICON) 2N835 NPN silicon epitaxial transi | |
Motorola |
2N838 | 2N838 (GERMANIUM) "CASE 22 (TO·18) Collector con | |
Motorola |
2N840 | 2N840 (SILICON) 2N841 NPN silicon annular transis | |
Motorola |
2N841 | 2N840 (SILICON) 2N841 NPN silicon annular transis | |
Inchange Semiconductor |
2N85 | INCHANGE Semiconductor isc N-Channel MOSFET Transi | |
Central Semiconductor |
2N858 | www.Data | |
Central Semiconductor |
2N859 | www.Data | |
Central Semiconductor |
2N860 | www.Data | |
Central Semiconductor |
2N861 | www.Data | |
Central Semiconductor |
2N862 | www.Data | |
Central Semiconductor |
2N863 | www.Data | |
Central Semiconductor |
2N864 | www.Data | |
Central Semiconductor |
2N865 | www.Data | |
Seme LAB |
2N869 | 2N869 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Central Semiconductor |
2N869 | www.Data | |
Motorola |
2N869 | 2N869 (SILICON) 2N995 CASE 22 (TO· IS) Collecto | |
NES |
2N869A | ||
Seme LAB |
2N869A | 2N869A Dimensions in mm (inches). 5.84 (0.230) 5. | |
Motorola |
2N869A | 2N869A 2N4453 JAN, JTX, JTXV AVAILABLE CASE 22-03, | |
Central Semiconductor |
2N869A | www.Data | |
Central Semiconductor Corp |
2N876 | SCRs (Silicon Controlled Rectifiers) Metal/Plastic | |
Central Semiconductor |
2N877 | SCRs (Silicon Controlled Rect | |
Digitron Semiconductors |
2N877 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N878 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N879 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N880 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N881 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N885 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N886 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N887 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N888 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N889 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Inchange Semiconductor |
2N90 | INCHANGE Semiconductor isc N-Channel MOSFET Transi | |
Unisonic Technologies |
2N90 | UNISONIC TECHNOLOGIES CO., LTD 2N90 2A, 900V N-CHA | |
UTC |
2N90-FC | UNISONIC TECHNOLOGIES CO., LTD 2N90-FC Power MOS | |
New Jersey Semi-Conductor |
2N909 | ||
Motorola |
2N910 | 2N910 (SILICON) 2N911 NPN silicon annular transis | |
Motorola |
2N911 | 2N910 (SILICON) 2N911 NPN silicon annular transis | |
Telefunken |
2N914 | OEM: Telefunken 2N914 Datasheet www.semi | |
ETC |
2N914 | ||
Motorola |
2N914 | ||
Semelab |
2N915 | 2N915 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N915 | 2N915 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL P | |
Telefunken |
2N915 | OEM: Telefunken 2N915 Datasheet www.semi | |
Seme LAB |
2N916 | 2N916 Dimensions in mm (inch | |
Motorola |
2N916 | 2N916 MAXIMUM RATINGS Rating Collector-Emitter Vo | |
Seme LAB |
2N916CSM | 2N916CSM Dimensions in mm (i | |
Seme LAB |
2N916DCSM | 2N916DCSM Dimensions in mm ( | |
STMicroelectronics |
2N918 | 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DE | |
Semicoa Semiconductor |
2N918 | • JAN level (2N918J) • JANTX level (2N918JX) | |
Motorola |
2N918 | 2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE | |
Microsemi |
2N918 | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA | |
Telefunken |
2N918 | OEM: Telefunken 2N918 Datasheet www.semi | |
Advanced Semiconductor |
2N918 | 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCR | |
Central Semiconductor |
2N918 | 2N918 NPN SILICON RF TRANSISTOR w w w. c e n t r | |
CDIL |
2N918 | Continental Device India Limited An ISO/TS 16949, | |
Seme LAB |
2N918CSM | LAB MECHANICAL DATA Dimensions in mm (inches) SEM | |
Microsemi |
2N918UB | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA | |
Seme LAB |
2N929 | 2N929 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N929 | 2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N9 | |
Motorola |
2N929A | 2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N9 | |
Micro Electronics |
2N930 | ||
CDIL |
2N930 | Continental Device India Limited An ISO/TS 16949, | |
Microsemi |
2N930 | TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Q | |
Seme LAB |
2N930 | 2N930 MECHANICAL DATA Dimensions in mm (inches) 5 | |
Central Semiconductor |
2N930 | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Motorola |
2N930 | MAXIMUM RATINGS Rating Collector-Emitter Voltage C | |
CDIL |
2N930A | Continental Device India Limited An ISO/TS 16949, | |
Central Semiconductor |
2N930A | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Motorola |
2N930A | MAXIMUM RATINGS Rating Collector-Emitter Voltage C | |
Seme LAB |
2N930CSM | LAB MECHANICAL DATA Dimensions in mm (inches) SEM | |
Motorola |
2N956 | 2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Colle | |
Motorola |
2N960 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N961 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N962 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N963 | 2N960 SERIES (continued) ELECTRICAL CHARACTERISTIC | |
Motorola |
2N964 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N964A | 2N964 (GERMANIUM) For Specifications, See 2N960 Da | |
Motorola |
2N965 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N966 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N967 | 2N960 SERIES (continued) ELECTRICAL CHARACTERISTIC | |
Motorola |
2N968 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N969 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N970 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N971 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N972 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N973 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N974 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N975 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N978 | 2N978 (SILICON) PNP SILICON ANNULAR TRANSISTOR de | |
Motorola |
2N985 | 2N985 (GERMANIUM) CAU22 (TO-lS) Collector connect | |
Seme LAB |
2N995 | 2N995 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N995 | 2N869 (SILICON) 2N995 CASE 22 (TO· IS) Collecto | |
Motorola |
2N996 | 2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · | |
Motorola |
2N998 | 2N998 (SILICON) Darlington amplifier containing t | |
Motorola |
2N998 | 2N998 CASE 20-03, STYLE 8 T072 (TO206AF) DARLINGT | |
BOURNS |
2NBS08 | *RoHS COMPLIANT Features ■ RoHS compliant* ■ | |
BOURNS |
2NBS14 | *RoHS COMPLIANT Features ■ RoHS compliant* ■ | |
BOURNS |
2NBS16 | *RoHS COMPLIANT Features ■ RoHS compliant* ■ | |
INCHANGE |
2NC5566 | isc Silicon NPN Power Transistor DESCRIPTION ·Hi | |
Toshiba Semiconductor |
2NH45 | ||
STMicroelectronics |
2NK100Z | STD2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ | |
STMicroelectronics |
2NK90Z | STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-CHANNEL 900V - | |
UTC |
2NM120 | UNISONIC TECHNOLOGIES CO., LTD 2NM120 Preliminar | |
UTC |
2NM60-Q | UNISONIC TECHNOLOGIES CO., LTD 2NM60-Q Power MOS | |
UTC |
2NM65 | UNISONIC TECHNOLOGIES CO., LTD 2NM65 2.0A, 650V N- | |
Unisonic Technologies |
2NM70 | UNISONIC TECHNOLOGIES CO., LTD 2NM70 2.0A, 700V N- | |
UTC |
2NM90 | UNISONIC TECHNOLOGIES CO., LTD 2NM90 Preliminary | |
UNISONIC TECHNOLOGIES |
2NNPP06 | UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEM | |
ST Microelectronics |
2NS04Z | STP62NS04Z N-CHANNEL CLAMPED 12mΩ - 40A TO-220 F | |
Toshiba Semiconductor |
2NU41 | ||
Tesla Elektronicke |
2NU72 | ||
Tesla Elektronicke |
2NU73 | ||
Tesla Elektronicke |
2NU74 | ||
NEC |
2P05M | ||
Fairchild Semiconductor |
2P102A | FDFS2P102A August 2001 FDFS | |
NEC |
2P1M | ||
ON Semiconductor |
2P2304NZF | ASM2P2304NZ Four Output PCI-X and General Purpose | |
NEC |
2P2M | ||
UTC |
2P40 | UNISONIC TECHNOLOGIES CO., LTD 2P40 -2.0A, -400V P | |
Thinki Semiconductor |
2P4M | 2P4M ® 2P4M Pb Free Plating Product Pb 2.0 Am | |
TGS |
2P4M | TIGER ELECTRONIC CO.,LTD Product specification T | |
NEC |
2P4M | DATA SHEET THYRISTORS 2P4M,2P6M 2 A (4 Ar.m.s.) | |
Inchange |
2P4M | isc Thyristors INCHANGE Semiconductor 2P4M APPLI | |
Inchange Semiconductor |
2P4M-D | isc Thyristors INCHANGE Semiconductor 2P4M-D DES | |
UTC |
2P50 | UNISONIC TECHNOLOGIES CO., LTD 2P50 -2.0A, -500V | |
TGS |
2P5M | TIGER ELECTRONIC CO.,LTD Product specification T | |
NEC |
2P5M | ||
TGS |
2P6M | TIGER ELECTRONIC CO.,LTD Product specification T | |
NEC |
2P6M | DATA SHEET THYRISTORS 2P4M,2P6M 2 A (4 Ar.m.s.) | |
Inchange Semiconductor |
2P6M | INCHANGE Semiconductor isc Thyristors APPLICATIONS | |
NXP |
2PA1015 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
2PA1576 | 2PA1576 PNP general-purpose transistor Rev. 06 � | |
nexperia |
2PA1576 | 2PA1576 PNP general-purpose transistor Rev. 06 � | |
nexperia |
2PA1576Q | 2PA1576Q PNP general-purpose transistor 1 January | |
nexperia |
2PA1576R | 2PA1576R PNP general-purpose transistor 1 January | |
NXP |
2PA1774 | DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PA17 | |
NXP |
2PA1774J | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA17 | |
NXP Semiconductors |
2PA1774M | Important notice Dear Customer, On 7 February 2017 | |
NXP |
2PA1774QM | Important notice Dear Customer, On 7 February 2017 | |
nexperia |
2PA1774QMB | 2PA1774xMB series 40 V, 100 mA PNP general-purpos | |
NXP |
2PA1774RM | Important notice Dear Customer, On 7 February 2017 | |
nexperia |
2PA1774RMB | 2PA1774xMB series 40 V, 100 mA PNP general-purpos | |
NXP |
2PA1774SM | Important notice Dear Customer, On 7 February 2017 | |
nexperia |
2PA1774SMB | 2PA1774xMB series 40 V, 100 mA PNP general-purpos | |
NXP |
2PA733 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
2PB1219 | DISCRETE SEMICONDUCTORS DATA SHEET handbook, half | |
NXP |
2PB1219A | DISCRETE SEMICONDUCTORS DATA SHEET handbook, half | |
NXP |
2PB1219AQ | DISCRETE SEMICONDUCTORS DATA SHEET handbook, half | |
NXP |
2PB1219AR | DISCRETE SEMICONDUCTORS DATA SHEET handbook, half | |
NXP |
2PB1219AS | DISCRETE SEMICONDUCTORS DATA SHEET handbook, half | |
NXP Semiconductors |
2PB1424 | 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor | |
NXP |
2PB709A | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage |
Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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