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2SD2642

Inchange Semiconductor
Part Number 2SD2642
Manufacturer Inchange Semiconductor
Title Silicon NPN Darlington Power Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation...
Features wise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA ICBO Collector Cutoff Current VCB= 110V; IE= 0 IEBO Emitter Cuto...

Published Jan 20, 2010
Datasheet PDF File 2SD2642 File

2SD2642   2SD2642   2SD2642  




2SD2642

Sanken Electric
Part Number 2SD2642
Manufacturer Sanken Electric
Title Silicon NPN Transistor
Description Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB.
Features ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. I C
  – V CE Characteristics (Typical) A 1m V CE ( sat )
  – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 6 I C
  – V B.

Datasheet PDF File 2SD2642 File

2SD2642   2SD2642   2SD2642  






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