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2SD1351

Inchange Semiconductor
Part Number 2SD1351
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistors
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : V...
Features IN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μA IEBO Emitter Cutoff Cur...

Published May 25, 2016
Datasheet PDF File 2SD1351 File

2SD1351   2SD1351   2SD1351  




2SD1351

Thinki Semiconductor
Part Number 2SD1351
Manufacturer Thinki Semiconductor
Title NPN Complementary Silicon Power Transistors
Description 2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Oper.
Features z Complements the 2SB988. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. z Switching Applications. TO-220C COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 23 1 ABSOLUTE MAXIMUM RATINGS (.

Datasheet PDF File 2SD1351 File

2SD1351   2SD1351   2SD1351  






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