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18N65

UNISONIC TECHNOLOGIES
Part Number 18N65
Manufacturer UNISONIC TECHNOLOGIES
Title N-CHANNEL MOSFET
Description The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low...
Features * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N65L-T3P-T 18N65G-T3P-T 18N65L-T3N-T 18N6...

Published May 25, 2014
Datasheet PDF File 18N65 File

18N65   18N65   18N65  




18N65M5

STMicroelectronics
Part Number 18N65M5
Manufacturer STMicroelectronics
Title N-Channel Power MOSFET
Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH hori.
Features Order code VDS RDS(on) max. ID STL18N65M5 650 V 240 mΩ 15 A
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested Applications G(4)
• Switching applications S(1, 2, 3) NG4D5678S123_v2 Description This device is an N-c.

Datasheet PDF File 18N65M5 File

18N65M5   18N65M5   18N65M5  




18N60M2

STMicroelectronics
Part Number 18N60M2
Manufacturer STMicroelectronics
Title N-Channel Power MOSFET
Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, th.
Features 3 12 TO-220FP ultra narrow leads D(2) Order code V DS RDS(on) max ID STFU18N60M2 600 V 0.280 Ω 13 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
• LLC converters, resonant convert.

Datasheet PDF File 18N60M2 File

18N60M2   18N60M2   18N60M2  




18N60-ML

UTC
Part Number 18N60-ML
Manufacturer UTC
Title N-CHANNEL POWER MOSFET
Description The UTC 18N60-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching ti.
Features * RDS(ON) ≤ 0.4 Ω @ VGS=10V, ID=9.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 18N60L-TF1-T 18N60G-TF1-T 18N60L-TF2-T 18N60G-TF2-T Pin Assignm.

Datasheet PDF File 18N60-ML File

18N60-ML   18N60-ML   18N60-ML  




18N60

Inchange Semiconductor
Part Number 18N60
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·.
Features
·With TO-247 packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

Datasheet PDF File 18N60 File

18N60   18N60   18N60  






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