Manufacture | Part Number | Description | |
Toshiba |
TK380P65Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK380P65Y | |
Toshiba |
TK380P60Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK380P60Y | |
Toshiba |
TK560P65Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK560P65Y | |
EATON |
DRQ125 | Technical Data DS4311 Effective September 2017 Su | |
Silicon Labs |
MGM111 | MGM111 Mighty Gecko Mesh Networking Module Data Sh | |
Toshiba |
TK380A60Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK380A60Y | |
Toshiba |
TK560A65Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK560A65Y | |
ON Semiconductor |
BSP16T1G | BSP16T1G High Voltage Transistors PNP Silicon Fea | |
EATON |
DRQ127 | Technical Data DS4311 Effective September 2017 Su | |
EATON |
DRQ73 | Technical Data DS4311 Effective September 2017 Su | |
EATON |
DRQ74 | Technical Data DS4311 Effective September 2017 Su | |
Toshiba |
TK560P60Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK560P60Y | |
UTC |
BSS123 | UNISONIC TECHNOLOGIES CO., LTD BSS123 Preliminar | |
PAN JIT |
BSS123 | PBSS123 100V N-Channel Enhancement Mode MOSFET � | |
LITE-ON |
BSS123 | N-Channel 100V MOSFET Features: Surface-mounted pa | |
ON Semiconductor |
BSS123 | BSS123 BSS123 N-Channel Logic Level Enhancement M | |
Bruckewell |
BSS123 | BSS123 N-Channel ENHANCEMENT MODE MOSFET Descrip | |
TAITRON |
BSS123 | SMD Power MOSFET Transistor (N-Channel) BSS123 SM | |
MCC |
BSS123 | Features • High Dense Cell Design for Extremely | |
ON Semiconductor |
ES1A | 1.0 A Ultra Fast Recovery Rectifier ES1A-ES1D Feat | |
ON Semiconductor |
ES1B | 1.0 A Ultra Fast Recovery Rectifier ES1A-ES1D Feat | |
ON Semiconductor |
ES1C | 1.0 A Ultra Fast Recovery Rectifier ES1A-ES1D Feat | |
ON Semiconductor |
ES1D | 1.0 A Ultra Fast Recovery Rectifier ES1A-ES1D Feat | |
LITE-ON |
ES1A | LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST REC | |
LITE-ON |
ES1B | LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST REC | |
LITE-ON |
ES1C | LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST REC | |
LITE-ON |
ES1D | LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST REC | |
LITE-ON |
ES1G | LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST REC | |
LITE-ON |
ES1J | LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST REC | |
Taiwan Semiconductor |
ES1D-T | ES1D-T - ES1J-T Taiwan Semiconductor 1A, 200V - 6 | |
Taiwan Semiconductor |
ES1G-T | ES1D-T - ES1J-T Taiwan Semiconductor 1A, 200V - 6 | |
Taiwan Semiconductor |
ES1J-T | ES1D-T - ES1J-T Taiwan Semiconductor 1A, 200V - 6 | |
EIC |
ES1A | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
EIC |
ES1B | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
EIC |
ES1C | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
EIC |
ES1D | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
EIC |
ES1E | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
EIC |
ES1G | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
EIC |
ES1J | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
UTC |
ES1A | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
UTC |
ES1B | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
UTC |
ES1C | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
UTC |
ES1D | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
UTC |
ES1E | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
UTC |
ES1G | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
UTC |
ES1J | UNISONIC TECHNOLOGIES CO., LTD ES1A THRU ES1J DI | |
HOTTECH |
ES1A | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1B | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1C | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1D | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1E | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1G | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1J | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1K | FEATURES Glass Passivated Die Construction � | |
HOTTECH |
ES1M | FEATURES Glass Passivated Die Construction � | |
SMC Diode |
ES1A | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1B | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1C | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1D | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1E | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1G | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1J | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1K | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
SMC Diode |
ES1M | Technical Data Data Sheet N0159, Rev. E ES1A-ES1M | |
NTE |
2N7002 | 2N7002 N−Ch, Enhancement Mode Field Effect Trans | |
KEC |
2N7002 | SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHI | |
Infineon |
2N7002 | OptiMOS™ Small-Signal-Transistor Features • N- | |
Rectron |
2N2222A | TO - 18 NPN SILICON PLANAR SWITCHING TRANSISTORS | |
NTE |
2N2222A | 2N2222A Silicon NPN Transistor Small Signal Genera | |
SEMICOA |
2N2222A | Description SEMICOA Corporation offers: • Screen | |
EIC |
BAT54 | Certificate TH97/10561QM Certificate TW00/17276EM | |
EIC |
BAT54A | Certificate TH97/10561QM Certificate TW00/17276EM | |
EIC |
BAT54C | Certificate TH97/10561QM Certificate TW00/17276EM | |
EIC |
BAT54S | Certificate TH97/10561QM Certificate TW00/17276EM | |
Yageo |
RC0402 | DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC0402 5 | |
Toshiba |
BAV70 | Switching Diodes Silicon Epitaxial Planar BAV70 1. | |
nexperia |
BAV70 | BAV70 series High-speed switching diodes Rev. 8 � | |
nexperia |
BAV70M | BAV70 series High-speed switching diodes Rev. 8 � | |
nexperia |
BAV70S | BAV70 series High-speed switching diodes Rev. 8 � | |
nexperia |
BAV70T | BAV70 series High-speed switching diodes Rev. 8 � | |
GOOD-ARK |
BAV70 | Features ■ High Switching Speed: trr ≤ 4 ns � | |
LITE-ON |
MMBT3906 | PNP General Purpose Transistor MMBT3906 FEATURES | |
Rectron |
MMBT3906 | MMBT3906 Silicon PNP SMD triode 1˖base 2˖emitte | |
NTE |
MMBT3906 | MMBT3906 Silicon PNP Transistor General Purpose Am | |
Bruckewell |
MMBT3906 | MMBT3906 PNP General Purpose Amplifier Features � | |
Diotec |
MMBT3906 | MMBT3906 MMBT3906 SMD General Purpose PNP Transis | |
PAN JIT |
MMBT3906-AU | MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSIS | |
EIC |
BAS19 | Certificate TH97/10561QM Certificate TW00/17276EM | |
EIC |
BAS20 | Certificate TH97/10561QM Certificate TW00/17276EM | |
EIC |
BAS21 | Certificate TH97/10561QM Certificate TW00/17276EM | |
SEMTECH |
BAS19 | BAS19, BAS20, BAS21 Silicon Epitaxial Planar Diode | |
SEMTECH |
BAS20 | BAS19, BAS20, BAS21 Silicon Epitaxial Planar Diode | |
SEMTECH |
BAS21 | BAS19, BAS20, BAS21 Silicon Epitaxial Planar Diode | |
SeCoS |
BAS20 | Elektronische Bauelemente BAS20 0.2A , 150 V Surf | |
TAITRON |
BAV99-226 | Three Terminals SMD Switching Diode Features • S | |
GOOD-ARK |
BAV99 | Features z Fast Switching Speed z For General Purp | |
KD |
BAW56 | BAW56 / BAV70 / BAV99 SURFACE MOUNT FAST SWITCHING | |
KD |
BAV99 | BAW56 / BAV70 / BAV99 SURFACE MOUNT FAST SWITCHING | |
Comchip |
1N4148W-G | SMD Switching Diode 1N4148W-G RoHS Device Features | |
Vishay |
1N4148W-V-G | Small Signal Fast Switching Diode 1N4148W-V-G Vis | |
PAN JIT |
1N4148W-AU | 1N4148W-AU SURFACE MOUNT SWITCHING DIODES VOLTAG | |
LITE-ON |
BSS138 | N-Channel 50V MOSFET Features: y Surface-mounted p | |
LITE-ON |
BAS21 | SURFACE MOUNT FAST SWITCHING DIODE BAS21, BAS21A/ | |
LITE-ON |
BAS21A | SURFACE MOUNT FAST SWITCHING DIODE BAS21, BAS21A/ | |
LITE-ON |
BAS21C | SURFACE MOUNT FAST SWITCHING DIODE BAS21, BAS21A/ | |
LITE-ON |
BAS21S | SURFACE MOUNT FAST SWITCHING DIODE BAS21, BAS21A/ | |
nexperia |
BAS21 | BAS21 High-voltage switching diode 1 July 2022 Pr | |
SeCoS |
BAS21 | Elektronische Bauelemente BAS21 Series Surface Mo | |
SeCoS |
BAS21A | Elektronische Bauelemente BAS21 Series Surface Mo | |
SeCoS |
BAS21C | Elektronische Bauelemente BAS21 Series Surface Mo | |
SeCoS |
BAS21S | Elektronische Bauelemente BAS21 Series Surface Mo | |
AiT Components |
BAS21 | AiT Components Inc. www.ait-components.com DESCRIP | |
Microsemi |
JANS2N2222A | 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / | |
Microsemi |
JANS2N2221A | 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / | |
Microsemi |
JAN2N2221A | 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / | |
Microsemi |
JANTX2N2221A | 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / | |
Microsemi |
JANTXV2N2221A | 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / | |
ON Semiconductor |
MMBT2907ALT1 | MMBT2907ALT1 General Purpose Transistors PNP Sili | |
MEI |
MMBT2907LT1 | General Purpose Transistor PNP Silicon • We | |
MEI |
MMBT2907ALT1 | General Purpose Transistor PNP Silicon • We | |
MEI |
S-MMBT2907LT1 | General Purpose Transistor PNP Silicon • We | |
MEI |
S-MMBT2907ALT1 | General Purpose Transistor PNP Silicon • We | |
Microsemi |
2N2906A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Microsemi |
JAN2N2907A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Microsemi |
JAN2N2906A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Microsemi |
JANTXV2N2906A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Microsemi |
JANTXV2N2907A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Microsemi |
JANS2N2906A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Microsemi |
JANS2N2907A | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
CDIL |
2N2906A | Continental Device India Limited An ISO/TS 16949, | |
CDIL |
2N2907A | Continental Device India Limited An ISO/TS 16949, | |
TAITRON |
2N2907A | Small Signal General Purpose Transistor (PNP) 2N29 | |
Seiko |
SG-210STF | Crystal oscillator CRYSTAL OSCILLATOR (SPXO) OUTP | |
TDK |
FA28 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA24 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA26 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA20 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA22 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA23 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA18 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA14 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA16 | CAPACITORS March 2018 MLCC with dipped radial lea | |
TDK |
FA11 | CAPACITORS March 2018 MLCC with dipped radial lea | |
KEMET |
U2J | Surface Mount Multilayer Ceramic Chip Capacitors ( | |
APEX |
PB64 | PB64 • PB64A Dual Power Booster Amplifier RoHS | |
APEX |
PB64A | PB64 • PB64A Dual Power Booster Amplifier RoHS | |
Digitron Semiconductors |
1N3821 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3821A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3822 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3822A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3823 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3823A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3824 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3824A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3825 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3825A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3826 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3826A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3827 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3827A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3828 | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Digitron Semiconductors |
1N3828A | 1N3821(A)-1N3828(A) High-reliability discrete pro | |
Motorola |
1N3821 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3822 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3823 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3824 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3825 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3826 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3827 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3828 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3829 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Motorola |
1N3830 | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ1 | |
Microsemi |
1N2970B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2971B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2972B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2973B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2974B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2975B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2976B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2977B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2978B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2979B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2980B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2981B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2982B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2983B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2984B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2985B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2986B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2987B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2988B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2989B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2990B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2991B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2992B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2993B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2994B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2995B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2996B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2997B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2998B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Microsemi |
1N2999B | 1N2970B – 1N3015B and 1N3993A – 1N3998A Avail | |
Toshiba |
TK560A60Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK560A60Y | |
Toshiba |
TK290A60Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK290A60Y | |
Toshiba |
TK290A65Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK290A65Y | |
Toshiba |
TK290P60Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK290P60Y | |
Toshiba |
TK290P65Y | MOSFETs Silicon N-Channel MOS (DTMOS) TK290P65Y | |
ISSI |
IS43LD16640C | IS43/46LD16640C IS43/46LD32320C ® Long-term Supp | |
ISSI |
IS46LD16640C | IS43/46LD16640C IS43/46LD32320C ® Long-term Supp | |
ISSI |
IS43LD32320C | IS43/46LD16640C IS43/46LD32320C ® Long-term Supp | |
ISSI |
IS46LD32320C | IS43/46LD16640C IS43/46LD32320C ® Long-term Supp | |
Maxim Integrated |
MAX17690 | Click here for production status of specific part | |
Parallax |
SX20AC | SX20AC/SX28AC Configurable Communications Controll | |
Parallax |
SX28AC | SX20AC/SX28AC Configurable Communications Controll | |
Analog Devices |
LTC6115 | FEATURES Current Sense nn Supply Range: 5V to 100V | |
Silicon Laboratories |
Si1001-C | Si1001-C Ultra-Low Power 32 kB, 10-bit ADC MCU wit |
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