Manufacture | Part Number | Description | |
Diodes |
AP7341 | ADVANCED INFORMATION AP7341 300mA HIGH PSRR LOW N | |
Diodes |
AP7342 | AP7342 DUAL 150mA HIGH PSRR LOW NOISE LDO WITH ENA | |
Diodes |
AP7344 | NEW PRODUCT AP7344 DUAL 300mA HIGH PSRR LOW NOISE | |
Diodes |
AP7346 | NEW PRODUCT Description AP7346 DUAL HIGH ACCURAC | |
BCD |
AP9106 | Data Sheet 8-Channels Switch for Multi-Cells Li+/ | |
BCD |
AP9107 | Preliminary Datasheet Analog Front-end Chip for M | |
Diodes |
APD140 | APD140 SCHOTTKY BARRIER RECTIFIERS Product Summar | |
Diodes |
APD160 | APD160 SCHOTTKY BARRIER RECTIFIER Product Summary | |
BCD |
APD160 | Data Sheet SCHOTTKY BARRIER RECTIFIER Features | |
BCD |
APD140 | SCHOTTKY BARRIER RECTIFIERS Features · Low Forwar | |
Diodes |
APD240 | APD240 SCHOTTKY BARRIER RECTIFIERS Product Summar | |
BCD |
APD240 | SCHOTTKY BARRIER RECTIFIERS Features · Low Forwar | |
BCD |
APD245 | SCHOTTKY BARRIER RECTIFIERS Features · Low Forwar | |
Diodes |
APD260 | APD260 SCHOTTKY BARRIER RECTIFIERS Product Summar | |
BCD |
APD260 | SCHOTTKY BARRIER RECTIFIERS Features · Low Forwar | |
Diodes |
APD340 | APD340 SCHOTTKY BARRIER RECTIFIERS Product Summar | |
Maxim |
MAX11300 | MAX11300 EVALUATION KIT AVAILABLE PIXI, 20-Port P | |
ON Semiconductor |
NTB25P06 | NTB25P06, NVB25P06 MOSFET – P-Channel, D2PAK -6 | |
ON Semiconductor |
NVB25P06 | NTB25P06, NVB25P06 MOSFET – P-Channel, D2PAK -6 | |
ON Semiconductor |
NTB25P06T4G | NTB25P06, NVB25P06 Power MOSFET −60 V, −27.5 | |
ON Semiconductor |
NVB25P06T4G | NTB25P06, NVB25P06 Power MOSFET −60 V, −27.5 | |
Fujitsu |
MHE2064AT | C141-E057-02EN MHE2064AT, MHE2043AT MHF2043AT, MHF | |
Fujitsu |
MHE2043AT | C141-E057-02EN MHE2064AT, MHE2043AT MHF2043AT, MHF | |
Fujitsu |
MHF2043AT | C141-E057-02EN MHE2064AT, MHE2043AT MHF2043AT, MHF | |
Fujitsu |
MHF2021AT | C141-E057-02EN MHE2064AT, MHE2043AT MHF2043AT, MHF | |
Fujitsu |
MHC2032AT | C141-E050-02EN MHC2032AT, MHC2040AT MHD2032AT, MHD | |
Fujitsu |
MHC2040AT | C141-E050-02EN MHC2032AT, MHC2040AT MHD2032AT, MHD | |
Fujitsu |
MHD2032AT | C141-E050-02EN MHC2032AT, MHC2040AT MHD2032AT, MHD | |
ON Semiconductor |
NTDV20P06L | NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15 | |
ON Semiconductor |
NVTFS5124PL | NVTFS5124PL MOSFET – Power, Single P-Channel -6 | |
ON Semiconductor |
NVTR4502P | NTR4502P, NVTR4502P Power MOSFET −30 V, −1.95 | |
ON Semiconductor |
NVTR4502PT1G | NTR4502P, NVTR4502P Power MOSFET −30 V, −1.95 | |
ON Semiconductor |
ATP304 | Ordering number : ENA2192 ATP304 P-Channel Power | |
ON Semiconductor |
NVMFS5113PL | NVMFS5113PL MOSFET – Power, Single P-Channel -6 | |
ON Semiconductor |
NVTR0202PL | NTR0202PL, NVTR0202PL Power MOSFET −20 V, −40 | |
ON Semiconductor |
NVTR0202PLT1G | NTR0202PL, NVTR0202PL Power MOSFET −20 V, −40 | |
ON Semiconductor |
STD25P03L | NTD25P03L, STD25P03L MOSFET – Power, P-Channel, | |
ON Semiconductor |
ATP101 | Ordering number : ENA1646A ATP101 P-Channel Power | |
ON Semiconductor |
NTF5P03 | NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P−Ch | |
ON Semiconductor |
NVF5P03 | NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P−Ch | |
ON Semiconductor |
NVF5P03T3G | NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P−Ch | |
ON Semiconductor |
MCH3333A | MCH3333A Power MOSFET –30V, 215mΩ, –2.0A, Si | |
Philips |
UBA2021 | INTEGRATED CIRCUITS DATA SHEET UBA2021 630 V driv | |
Fujitsu |
MHD2021AT | C141-E050-02EN MHC2032AT, MHC2040AT MHD2032AT, MHD | |
ON Semiconductor |
ATP112 | Ordering number : ENA1754A ATP112 P-Channel Power | |
ON Semiconductor |
ATP114 | Ordering number : ENA1711A ATP114 P-Channel Power | |
ON Semiconductor |
ATP113 | Ordering number : ENA1755A ATP113 P-Channel Power | |
ON Semiconductor |
BBS3002 | Ordering number : ENA1357C BBS3002 P-Channel Powe | |
Renesas |
NP60N03SUG | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03SUG | |
Renesas |
NP90N03VHG | NP90N03VHG MOS FIELD EFFECT TRANSISTOR Preliminar | |
International Rectifier |
IRFZ44ZPbF | Features l Advanced Process Technology l Ultra Low | |
International Rectifier |
IRFZ44ZSPbF | Features l Advanced Process Technology l Ultra Low | |
International Rectifier |
IRFZ44ZLPbF | Features l Advanced Process Technology l Ultra Low | |
Renesas |
NP36N055HHE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE | |
Renesas |
NP36N055IHE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE | |
Renesas |
NP36N055SHE | DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE | |
Renesas |
NP90N03VLG | NP90N03VLG MOS FIELD EFFECT TRANSISTOR Preliminar | |
International Rectifier |
IRL8113PbF | PD - 95582 IRL8113PbF IRL8113SPbF Applications l | |
International Rectifier |
IRL8113SPbF | PD - 95582 IRL8113PbF IRL8113SPbF Applications l | |
International Rectifier |
IRL8113LPbF | PD - 95582 IRL8113PbF IRL8113SPbF Applications l | |
International Rectifier |
IRL8113 | Applications l High Frequency Synchronous Buck Con | |
International Rectifier |
IRL8113S | Applications l High Frequency Synchronous Buck Con | |
International Rectifier |
IRL8113L | Applications l High Frequency Synchronous Buck Con | |
Renesas Technology |
RJK0656DPB | RJK0656DPB 60V, 40A, 5.6m max. Silicon N Channe | |
Renesas Technology |
RJK0853DPB | RJK0853DPB 80V, 40A, 8.0m max. Silicon N Channe | |
Diodes |
DMG4N65CTI | ADVANCE INFORMATIO DMG4N65CTI N-CHANNEL ENHANCEME | |
STMicroelectronics |
STL65DN3LLH5 | STL65DN3LLH5 Dual N-channel 30 V, 0.0059 Ω, 19 A | |
STMicroelectronics |
STL56N3LLH5 | STL56N3LLH5 Datasheet N-channel 30 V, 7.6 mΩ typ. | |
KEC |
KIA6903P | SEMICONDUCTOR TECHNICAL DATA KIA6903P BIPOLAR LIN | |
Myland |
MY81SPK02M2 | MY81SPK02M2 Datasheet v0.2 MY81SPK02M2 Bluetooth 3 | |
Chenbing |
IS1681S | -------------------------------------------------- | |
Toshiba Semiconductor |
U20FWJ2C48M | 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RE | |
HAOPIN |
BT134-600E | TM BT134-600E HPM Sensitive Gate Triacs HAOPIN | |
Jilin Sino |
HBR20200 | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
HBR20200C | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
HBR20200CR | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
HBR20200F | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
HBR20200FR | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
HBR20200HF | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
HBR20200HFR | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE | |
Jilin Sino |
3CT12S | 双向晶闸管 R TRIACS 3CT12S 主要参数 MAIN | |
Wuxi Huajing Microelectronics |
3CT12 | 1 3CT12 3CT12 2 2.1 2.2 TO-220AB Tamb= 25 VDR | |
Jilin Sino |
3CT06B | 门极灵敏触发型晶闸管 R Sensitive Gate SC | |
Jilin Sino |
3CT12A | 反向阻断三极晶闸管 R Thyristors(SCR) 3CT1 | |
JILIN SINO-MICROELECTRONICS |
JCS1N60 | N 沟道增强型场效应晶体管 R N-CHANNEL MO | |
Jilin Sino |
HBR2060 | 肖特基势垒二极管 R SCHOTTKY BARRIER DIODE |
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