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2SD2118 Datasheet PDF

2SD2118
YUKUTO

Part Number 2SD2118
Description NPN Transistor
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YUKUTO SEMICONDUCTOR
Silicon Transistor
2SD2118
TRANSISTOR (NPN)
FEATURES
· Low VCE=0.25V(Typ)
· Excellent Dc current gain characteristics
TO-251
TO-252-2L
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
Value
50
20
6
5
1
-55-150
Units
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic=50 A,IE=0
50
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO Ic=1mA,IB=0
V(BR)EBO IE=50 A,IC=0
20
6
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
IEBO
hFE(1)
VCB=40V,IE=0
VEB=5V,IC=0
VCE=2V,IC=0.5A
120
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat) IC=4A,IB=100mA
fT VCE=6V,IC=50mA,f=100MHz
Cob VCB=20V,IE=0,f=1MHz
TYP
150
30
MAX UNIT
V
V
V
0.5 A
0.5 A
390
1V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Q
120-270
R
180-390
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