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2SD2136 Datasheet PDF

2SD2136
WEJ

Part Number 2SD2136
Description NPN Transistor
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RoHS
2SD2136
2SD2136 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM:
1.25 W (Tamb=25)
.,LCollector current
ICM:
Collector-base voltage
3A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55to +150
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
LBase-emitter voltage
ETransition frequency
J Turn-on time
Switch Time
Storage time
WE Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
ton
tstg
tf
Test conditions
Ic=1mA, IE=0
Ic=30mA, IB=0
IE=1mA, IC=0
VCB=60V, IE=0
VEB=6V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=5V, IC=0.1A, f=200MHz
IC=1A, IB1=0.1A, IB2=-0.1A
MIN TYP MAX UNIT
60 V
60 V
6V
200 µA
1 mA
40 250
10
1.2 V
1.8 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
CLASSIFICATION OF hFE(1)
Rank
PQR
Range
40-90
70-150
120-250
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

















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