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1N959B Datasheet PDF

1N959B
Vishay Telefunken

Part Number 1N959B
Description Silicon Z-Diodes
Page 3 Pages
1N959B datasheet pdf
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Silicon Z–Diodes
Features
D Very sharp reverse characteristic
D Very high stability
D Low reverse current level
D VZ–tolerance ± 5%
1N957B...1N963B
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
xTest Conditions
TL 75°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
200
–65...+200
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=9.5mm (3/8”), TL=constant
Symbol
RthJA
Value
300
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol Min Typ Max Unit
VF 1.1 V
Rev. A3, 13-Nov-98
1 (3)

















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