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5FL2CZ47A Datasheet PDF

5FL2CZ47A
Toshiba Semiconductor

Part Number 5FL2CZ47A
Description SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK
Page 5 Pages
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5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V, 400V
z Average Output Rectified Current : IO = 5 A
z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
z Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
5DL2CZ47A
200
Repetitive Peak
Reverse Voltage
5FL2CZ47A
VRRM
300
V
5GL2CZ47A
400
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
IO
IFSM
Tj
Tstg
5
25 (50Hz)
27.5 (60Hz)
40~150
40~150
0.6
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 2.0 g
1210C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Peak Forward
Voltage (Note 1)
5DL2CZ47A
5FL2CZ47A
5GL2CZ47A
Repetitive Peak
Reverse Current
(Note 1)
5DL2CZ47A
5FL2CZ47A
5GL2CZ47A
Reverse Recovery Time
(Note 1)
Forward Recovery Time
(Note 1)
Thermal Resistance
VFM
IRRM
trr
tfr
Rth (jc)
Note 1: A value applied to one cell.
TEST CONDITION
IFM = 2.5A
VRRM = Rated
IF = 2A, di / dt = 20A / μs
IF = 1A
Total DC, Junction to Case
TYP.
MAX UNIT
0.98
1.3
1.8
10
10
50
35
100
3.8
V
μA
ns
ns
°C / W
POLARITY
1 2006-11-08

















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5FL2CZ47A SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK 5FL2CZ47A
Toshiba Semiconductor
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