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2SD2150 Datasheet PDF

2SD2150
Rohm

Part Number 2SD2150
Description Low Frequency Transistor
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Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
IC / IB = 2A / 0.1A
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3
IC
5
Collector power dissipation
PC
0.5
2
Junction temperature
Tj 150
Storage temperature
Tstg
1 Single pulse Pw=10ms
2 Mounted on a 40×40×0.7mm Ceramic substrate.
55 to +150
Unit
V
V
V
A (DC)
A (Pulse) 1
W
W 2
°C
°C
zDimensions(Unit : mm)
2SD2150
4.5+−00..21
1.6±0.1
1.5−+00..12
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4−+00..015
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
Abbreviated symbol: CF
Denotes hFE
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Measured using pulse current.
Cob
Min.
40
20
6
120
Typ.
0.2
290
25
Max.
0.1
0.1
0.5
560
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
VCE=2V, IC=0.1A
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
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2009.11 - Rev.B

















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