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150KR40 Datasheet PDF

150KR40
NAINA SEMICONDUCTOR

Part Number 150KR40
Description SILICON POWER DIODE
Page 1 Pages
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45L/150K
SILICON POWER DIODE
NAINA
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
IF
Maximum Average Forward
Current Te=1500C
150A
VFM Maximum peak forward
voltage drop @ Rated IF(AV)
1.4V
IFSM
Maximum peak one cycle
(non-rep) surge current 10 m sec
3570A
IFRM
Maximum peak repetitive
surge current
750A
I2t Maximum I2t rating (non-rep.) for 64,000 A2 Sec
5 to 10 msec.
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj
Tstg
W
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Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
ELECTRICAL RATINGS
0.250C/W
-650C to 1500C
-650C to 2000C
2.0 M-kg min,
3.0 M-kg max
150 gms.
TYPE
VRRM
45L/150K
Max. repetitive peak reverse
voltage (v)
10
100
VR(RMS) Max. R.M.S. reverse voltage (V) 70
20 40 60
200 400 600
140 280 420
80 100
800 1000
120 140 160
1200 1400 1600
560 700 840 980 1120
VR
IR(AV)
Max. D.C. Blocking Voltage (V) 100 200 400 600
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRRM Tc 250C (uA)
40
200
80 160 240
200 200 200
800 1000 1200 1400 1600
320 400
200 200
480 560 640
200 200 200
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR-63, NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site:www.nainasemi.com

















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