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2SD2112 Datasheet PDF

2SD2112
Inchange Semiconductor

Part Number 2SD2112
Description Power Transistor
Page 2 Pages
2SD2112 datasheet pdf
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INCHANGE Semiconductor
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isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2112
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 1000(Min) @ IC= 3A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
wwwVEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
12 A
25
W
2
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

















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