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1N4688 Datasheet PDF

1N4688
Fairchild Semiconductor

Part Number 1N4688
Description Zeners
Page 2 Pages
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Zeners
1N4678 - 1N4702
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
PD Power Dissipation
@ TL 75°C, Lead Length = 3/8”
Derate above 75°C
500
4.0
TJ, TSTG Operating and Storage Temperature Range -65 to +200
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Units
mW
mW/°C
°C
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Electrical Characteristics TA=25°C unless otherwise noted
Device
1N4678
1N4679
1N4680
1N4681
1N4682
VZ (Volts) @ IZ = 50µA (Note 1)
Min.
Typ.
Max.
1.71
1.8
1.89
1.9 2
2.1
2.09
2.28
2.2
2.4
2.31
2.52
2.565
2.7
2.835
IR @ VR
µA Volts
7.5 1
51
41
21
11
1N4683
1N4684
1N4685
1N4686
1N4687
2.85
3.135
3.42
3.705
4.085
3
3.3
3.6
3.9
4.3
3.15
0.8
1
4.465 7.5 1.5
3.78
7.5
2
4.095
5
2
4.515
4
2
1N4688
1N4689
1N4690
1N4691
1N4692
4.465
4.845
5.32
5.89
6.45
4.7
5.1
5.6
6.2
6.8
4.935
5.355
5.88
6.51
7.14
10
10
10
10
10
3
3
4
5
5.1
1N4693
1N4694
1N4695
1N4696
1N4697
7.125
7.79
8.265
8.645
9.5
7.5
8.2
8.7
9.1
10
7.785
8.61
9.135
9.555
10.5
10
1
1
1
1
5.7
6.2
6.6
6.9
7.6
1N4698
1N4699
1N4700
1N4701
1N4702
10.45
11.4
12.35
13.3
14.25
11
12
13
14
15
11.55
0.05
8.4
12.6
0.05
9.1
13.65
0.05
9.8
14.7
0.05
10.6
15.75
0.05
11.4
VF Forward Voltage = 1.5V Max @ IF = 100mA
IZM (mA)
(Note 2)
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29
27.4
26.2
24.8
21.6
20.4
19
17.5
16.3
VZ (Volts)
(Note 3)
0.7
0.7
0.75
0.8
0.85
0.9
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.9
0.75
0.5
0.1
0.08
0.1
0.11
0.12
0.13
0.14
0.15
Notes:
1. Zener Voltage (VZ)
The zener voltage is measured with the device junction in the themal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length.
2. Maximum Zener Current Ratings (IZM)
The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operation point and the power derating curve.
3. Maximum Voltage Change (VZ)
Voltage change is equal to the difference between VZ at 100µA and at 10µA.
©2003 Fairchild Semiconductor Corporation
1N4678 - 1N4702, Rev. B

















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