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1N1200A Datasheet PDF

1N1200A
Digitron Semiconductors

Part Number 1N1200A
Description SILICON POWER RECTIFIER
Page 3 Pages
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1N1199(A,B)-1N1206(A,B)
High-reliability discrete products
and engineering services since 1977
SILICON POWER RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Symbol
Peak reverse voltage
Operating & storage
temperature range
VR
TJ, Tstg
Maximum thermal resistance
RθJC
Mounting torque
Weight
Add “R” to part numbers for reverse polarity.
1N1199
50V
1N1200
100V
1N1201
150V
1N1202
200V
1N1203
300V
1N1204
400V
-65 to +200°C
2.5°C/W junction to case
25-30 inch pounds
.16 ounces (5.0 grams) typical
1N1205
500V
1N1206
600V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Average forward current
IF(AV) 12 Amps
Maximum surge current
Maximum I2t for fusing
IFSM 250 Amps
I2t 260 A2s
Maximum peak forward voltage
VFM 1.2 Volts
Maximum peak reverse current
IRM 10 µA
Maximum peak reverse current
IRM 1.0 mA
Maximum recommended operating frequency
10 kHz
Pulse test: pulse width 300µsec. Duty cycle 2%
Test Condition
TC = 170°C, half-sine wave, RθJC = 2.5°C/W
8.3ms, half-sine, TJ = 200°C
IFM = 30A: TJ = 25°C*
VRRM, TJ = 25°C
VRRM, TJ = 150°C*
Rev. 20150317

















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1N1200A datasheet pdf
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