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1N4102 Datasheet PDF

1N4102
Central Semiconductor

Part Number 1N4102
Description SILICON ZENER DIODE
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1N4099 THRU 1N4135
SILICON ZENER DIODE
LOW NOISE
6.8 VOLT THRU 100 VOLT
250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4099 series
silicon Zener diode is designed for low leakage, low
current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
TYPE
ZENER
VOLTAGE
VZ @ IZT
MIN NOM MAX
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ VR
MAXIMUM
ZENER
CURRENT
IZM
VVV
μA
Ω
μA V
mA
1N4099 6.460 6.8 7.140
1N4100 7.125 7.5 7.875
1N4101 7.790 8.2 8.610
1N4102 8.265 8.7 9.135
1N4103 8.645 9.1 9.555
1N4104 9.50 10 10.50
1N4105 10.45 11 11.55
1N4106 11.40 12 12.60
1N4107 12.35 13 13.65
1N4108 13.30 14 14.70
1N4109 14.25 15 15.75
1N4110 15.20 16 16.80
1N4111 16.15 17 17.85
1N4112 17.10 18 18.90
1N4113 18.05 19 19.95
1N4114 19.00 20 21.00
1N4115 20.90 22 23.10
1N4116 22.80 24 25.20
1N4117 23.75 25 26.25
1N4118 25.65 27 28.35
1N4119 26.60 28 29.40
1N4120 28.50 30 31.50
1N4121 31.35 33 34.65
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
200
10 5.2
35.0
200
10 5.7
31.8
200
1.0 6.3
29.0
200
1.0 6.7
27.4
200
1.0 7.0
26.2
200
1.0 7.6
24.8
200
0.05
8.5
21.6
200
0.05
9.2
20.4
200
0.05
9.9
19.0
200
0.05
10.7
17.5
100
0.05
11.4
16.3
100
0.05
12.2
15.4
100
0.05
13.0
14.5
100
0.05
13.7
13.2
150
0.05
14.5
12.5
150
0.01
15.2
11.9
150
0.01
16.8
10.8
150
0.01
18.3
9.9
150
0.01
19.0
9.5
150
0.01
20.5
8.8
200
0.01
21.3
8.5
200
0.01
22.8
7.9
200
0.01
25.1
7.2
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
R1 (4-February 2014)

















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