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1N4692C Datasheet PDF

1N4692C
Central Semiconductor

Part Number 1N4692C
Description SILICON ZENER DIODE
Page 3 Pages
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1N4678C THRU 1N4717C
SILICON ZENER DIODE
LOW LEVEL
1.8 VOLT THRU 43 VOLT
500mW, 2% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4678C series
devices are silicon Zener diodes designed for
applications requiring an extremely low operating
current (50μA), and low leakage.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TL=75°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
500
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Type
Zener
Voltage
VZ @ IZT
MIN
NOM
MAX
Test
Current
IZT
Maximum
Reverse Leakage
Current
IR @ VR
Maximum
Voltage
Change*
ΔVZ
VVV
μA μA V
V
Maximum
Regulator
Current
IZM
mA
1N4678C
1.764 1.8 1.836
50
7.5 1.0
0.70
120.0
1N4679C
1.960 2.0 2.040
50
5.0 1.0
0.70
110.0
1N4680C
2.156 2.2 2.244
50
4.0 1.0
0.75
100.0
1N4681C
2.352 2.4 2.448
50
2.0 1.0
0.80
95.0
1N4682C
2.646 2.7 2.754
50
1.0 1.0
0.85
90.0
1N4683C
2.940 3.0 3.060
50
0.8 1.0
0.90
85.0
1N4684C
3.234 3.3 3.366
50
7.5 1.5
0.95
80.0
1N4685C
3.528 3.6 3.672
50
7.5 2.0
0.95
75.0
1N4686C
3.822 3.9 3.978
50
5.0 2.0
0.97
70.0
1N4687C
4.214 4.3 4.386
50
4.0 2.0
0.99
65.0
1N4688C
4.606 4.7 4.794
50
10 3.0
0.99
60.0
1N4689C
4.998 5.1 5.202
50
10 3.0
0.97
55.0
1N4690C
5.488 5.6 5.712
50
10 4.0
0.96
50.0
1N4691C
6.076 6.2 6.324
50
10 5.0
0.95
45.0
1N4692C
6.664 6.8 6.936
50
10 5.1
0.90
35.0
1N4693C
7.350 7.5 7.650
50
10 5.7
0.75
31.8
1N4694C
8.036 8.2 8.364
50
1.0 6.2
0.50
29.0
1N4695C
8.526 8.7 8.874
50
1.0 6.6
0.10
27.6
1N4696C
8.918 9.1 9.282
50
1.0 6.9
0.08
26.2
1N4697C
9.800
10
* ΔVZ=VZ @ 100μA Minus VZ @ 10μA
10.20
50
1.0 7.6
0.10
24.8
R4 (31-July 2013)

















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