Z0103MA Datasheet PDF - NXP

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Z0103MA
NXP

Part Number Z0103MA
Description 4Q Triac
Page 13 Pages


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Z0103MA
4Q Triac
6 May 2015
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic
package intended for use in applications requiring direct interfacing to logic ICs and low
power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing to low power gate drive circuits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate in four quadrants
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 8A
- - 1A
- - 3 mA
- - 3 mA
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NXP Semiconductors
Z0103MA
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 3 mA
- - 5 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0103MA
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Z0103MA
Product data sheet
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6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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NXP Semiconductors
Z0103MA
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IG = 6 mA; T2+ G+
IG = 6 mA; T2+ G-
IG = 10 mA; T2- G+
IG = 6 mA; T2- G-
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
1 .2
IT(RMS )
(A)
0 .8
003aac264
16
IT(RMS)
(A)
12
8
0 .4
4
Min Max Unit
- 600 V
- 1A
- 8A
- 8.5 A
- 0.32 A2s
- 50 A/µs
- 50 A/µs
- 20 A/µs
- 50 A/µs
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
003a a f977
0
-50 0 50 100 150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Z0103MA
Product data sheet
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6 May 2015
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NXP Semiconductors
Z0103MA
4Q Triac
2 .0
Ptot
(W)
1 .6
1 .2
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
0 .8
0 .4
α
α
003aac259
α = 180°
120°
9 0°
6 0°
30°
0 .0
0
0.2 0.4 0.6 0.8
1
Fig. 3.
alpha = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
10
ITSM
(A)
8
1 .2
IT(RMS ) (A)
003aad318
6
4
IT ITSM
2t
1/f
Tj(init) = 25 °C max
0
1
10 102 103
number of cycles
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0103MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 13



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