Z00607MN Datasheet PDF - STMicroelectronics

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Z00607MN
STMicroelectronics

Part Number Z00607MN
Description Standard 0.8A Triacs
Page 8 Pages


Z00607MN datasheet pdf
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A2
G
A1
A2
A1 G
TO-92
Z00607MA
A2
G
A2
A1
SOT-223
Z00607MN
Features
On-state rms current = 0.8 A
Repetitive peak off-state voltage = 600 V
Gate triggering current = 5 mA
Z00607
Standard 0.8 A Triacs
Datasheet - production data
Description
The Z00607 is suitable for low power AC
switching applications. Typical applications
include home appliances (electrovalve, pump,
door lock, small lamp control), fan speed
controllers,...
Thanks to the low gate triggering current these
triacs can be driven directly by microcontrollers.
June 2014
This is information on a product in full production.
DocID6629 Rev 9
1/8
www.st.com



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Characteristics
1 Characteristics
Z00607
Symbol
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Table 1. Absolute maximum ratings
Parameter
On-state rms current
(full sine wave)
SOT-223
TO-92
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 50 Hz
F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current IG
= 2 x IGT , tr 100 ns
F = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Ttab = 85 °C
TL = 50 °C
t = 20 ms
t = 16.7 ms
Tj = 110 °C
Tj = 110 °C
Tj = 110 °C
Value
Unit
0.8 A
9
A
9.5
0.45
A²s
20 A/µs
1
0.1
- 40 to + 150
- 40 to + 110
A
W
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
IGT (1)
VGT
VGD
IH (2)
VD = 12 V, RL = 30 Ω
VD = VDRM, RL = 3.3 kΩ, Τj = 110 °Χ
IT = 200 mA
IL IG = 1.2 IGT
dV/dt (2) VD = 67% VDRM, gate open Τj = 110 °Χ
(dV/dt)c (2) (δς/δτ)χ = 0.35 Α/μσ, Τj = 110 °Χ
1. minimum IGT is guaranteed at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX
MAX
MIN
MX.
MAX
MIN
MIN
5
7
1.3
0.2
5
10
20
10
1.5
Unit
mA
V
V
mA
mA
V/µs
V/µs
Table 3. Static characteristics
Symbol
Test Conditions
VTM(1)
Vto (1)
Rd (1)
ITM = 1.1 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM = 600 V
1. for both polarities of A2 referenced to A1.
Tj = 25 °C
Tj = 110 °C
Tj = 110 °C
Tj = 25 °C
Tj = 110 °C
MAX.
MAX.
MAX.
MAX.
2/8 DocID6629 Rev 9
Value
1.5
0.95
420
5
0.1
Unit
V
V
mΩ
µA
mA



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Z00607
Characteristics
Symbol
Rth(j-t)
Rth(j-I)
Junction to tab (AC)
Junction to lead (AC)
Rth(j-a) Junction to ambient
1. S = Copper surface under tab.
Table 4. Thermal resistances
Parameter
S(1) = 5 cm²
SOT-223
TO-92
SOT-223
TO-92
Value
25
60
60
150
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation
versus RMS on-state current
(full cycle)
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 IT(RMS)(A)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure 2. Relative variation of gate trigger,
holding and latching current versus junction
temperature
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
Typical values
0.5
Tj (°C)
0.0
-40 -20 0 20 40 60 80 100 120
Figure 3. Surge peak on-state current versus
Figure 4. Non-repetitive surge peak
number of cycles
on-state current and corresponding value of I2t
ITSM (A)
10
9
8
7
6
5
4 Repetitive
Tamb = 25°C
3
2
1
0
1
Non repetitive
Tj initial = 25°C
Number of cycles
10 100
t=20ms
One cycle
1000
ITSM (A), I2t (A2s)
200.0
100.0
dI/dt limitation:
20A/µs
10.0
Tj initial = 25°C
ITSM
1.0
Sinusoidal pulse with width tp < 10 ms
0.1
0.01 0.10 1.00
I2t
tp (ms)
10.00
DocID6629 Rev 9
3/8
8



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Characteristics
Z00607
Figure 5. On-state characteristics
(maximum values)
ITM(A)
10.0
Tj = Tjmax.
1.0
Tj = 25°C
Tj=max.
Vt0=0.95 V
Rd=420 mΩ
VTM (V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 6. Relative variation of critical rate
of decrease of main current versus (dV/dt)c
(typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
8.0
6.0
4.0
2.0
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
Figure 7. Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 8. SOT-223 Thermal resistance junction
to ambient versus copper surface under tab
(dI/dt)c [Tj] / (dI/dt)c [Tj Specified]
6
5
4
3
2
1
Tj (°C)
0
0 10 20 30 40 50 60 70 80 90 100 110
Rth(j-a)(°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0
1.5
Printed circuit board FR4,
copper thickness = 35 µm
S(cm²)
2.0 2.5 3.0 3.5 4.0 4.5 5.0
4/8 DocID6629 Rev 9



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