X1049A Datasheet PDF - UTC

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X1049A
UTC

Part Number X1049A
Description HIGH GAIN TRANSISTOR
Page 4 Pages


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UNISONIC TECHNOLOGIES CO., LTD
X1049A
NPN SILICON TRANSISTOR
HIGH GAIN TRANSISTOR
„ FEATURES
* VCEV = 80V
* High Gain
* 20 Amps pulse current
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
X1049AL-TF3-T
X1049AG-TF3-T
X1049AL-TF2-T
X1049AG-TF2-T
X1049AL-T92-B
X1049AG-T92-B
X1049AL-T92-K
X1049AG-T92-K
Package
TO-220F
TO-220F2
TO-92
TO-92
Pin Assignment
123
BCE
BCE
EBC
EBC
Packing
Tube
Tube
Tape Box
Bulk
„ MARKING
TO-220F / TO-220F2
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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X1049A
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
80
25
V
V
Emitter-Base Voltage
Collector Current
DC
Pulse
VEBO
IC
5
4
20
V
A
A
Base Current
IB 500 mA
TO-220F
2
Power Dissipation (TA=25°C)
TO-220F2
PD
2.1 W
TO-92
1
Junction Temperature
TJ 125 °C
Operating Temperature
Storage Temperature
TOPR
TSTG
-20 ~ +85
-40 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=100μA
Collector-Emitter Breakdown Voltage
VCEO IC=10mA
Collector-Emitter Breakdown Voltage
VCES IC=100μA
Collector-Emitter Breakdown Voltage
VCEV IC=100μA, VEB=1V
Emitter-Base Breakdown Voltage
VEBO IE=100μA
Collector Cut-Off Current
ICBO VCB=50V
Emitter Cut-Off Current
IEBO VEB=4V
Collector Emitter Cut-Off Current
ICES
VCES=50V
IC=0.5A, IB=10mA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=1A, IB=10mA
IC=2A, IB=10mA
IC=4A, IB=50mA
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
Base-Emitter Turn-On Voltage (Note)
VBE(ON) IC=4A, VCE=2V
IC=10mA, VCE=2V
IC=0.5A, VCE=2V
DC Current Gain (Note)
hFE IC=1A, VCE=2V
IC=4A, VCE=2V
IC=20A, VCE=2V
Transition Frequency
fT IC=50mA, VCE=10V, f=50MHz
Output Capacitance
COBO VCB=10V, f=1MHz
Turn-On Time
tON IC=4A, IB=40mA, VCC=10V
Turn-Off Time
tOFF IC=4A, IB=±40mA, VCC=10V
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%
MIN TYP MAX UNIT
80 120
V
25 35
V
80 120
V
80 120
V
5 8.75
V
0.3 10 nA
0.3 10 nA
0.3 10 nA
30 70
60
125
130
280
mV
155 400
890 980 mV
820 920 mV
250 430
300 450
300 450 1200
200 350
7
180 MHz
45 60 pF
125 ns
380 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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X1049A
„ TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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X1049A
„ TYPICAL CHARACTERISTICS(Cont.)
Transient Thermal Resistance
180
D=1(D,C)
160
140
120
100 D=0.5
80
60
D=0.2
40
D=0.1
20 D=0.05
0
Single Pulse
0.1ms 1ms 10ms 100ms 1s 10s 100s
Pulse Width
NPN SILICON TRANSISTOR
Power Dissipation vs. Ambient Temperature
1.0
0.75
0.50
0.25
0.00
-40 0 40 80 120 160 200
Ambient Temperature ( )
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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