X0402MF Datasheet PDF - STMicroelectronics

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X0402MF
STMicroelectronics

Part Number X0402MF
Description 4A SCRS
Page 5 Pages


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SENSITIVE
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
4
600 and 800
50 to 200
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X04 SCR series is suitable for all applications
where the available gate current is limited, such as
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in low
power supplies...
X04 Series
4A SCRS
TO202-3
(X04xxF)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
Parameter
RMS on-state current (180° conduction angle)
IT(AV) Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state
current
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tl = 60°C
Tamb = 25°C
Tl = 60°C
Tamb = 25°C
Tj = 25°C
Tj = 25°C
Value
4
1.35
2.5
0.9
33
30
4.5
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
1.2
0.2
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
September 2000 - Ed: 3
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X04 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50mA RGK = 1k
IG = 1mA RGK = 1k
VD = 67% VDRM RGK = 1k
ITM = 8 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 1 k
Tj = 125°C
Tj = 110°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MIN.
MAX.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
X04xx
02 05
_ 20
200 50
0.8
0.1
8
5
6
10 15
1.8
0.95
100
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
mA
THERMAL RESISTANCES
Symbol
Rth(j-l)
Rth(j-a)
Junction to leads (DC)
Junction to ambient (DC)
Parameter
Value
15
100
Unit
°C/W
PRODUCT SELECTOR
Part Number
X0402MF
X0402NF
X0405MF
X0405NF
600 V
X
X
Voltage
800 V
X
X
Sensitivity
200 µA
200 µA
50 µA
50 µA
Package
TO202-3
TO202-3
TO202-3
TO202-3
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ORDERING INFORMATION
X04 Series
OTHER INFORMATION
Part Number
Marking
X04xxyF 1AA2
X04xxyF 0AA2
X04xxyF
X04xxyF
Note: xx = sensitivity, y = voltage
Weight
0.8 g
0.8 g
Base Quantity
250
50
Packing mode
Bulk
Tube
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
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X04 Series
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values).
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
4/5



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