X00619 Datasheet PDF - ST Microelectronics

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X00619
ST Microelectronics

Part Number X00619
Description 0.8 A sensitive gate SCR
Page 7 Pages


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X00619
0.8 A sensitive gate SCR
Features
IT(RMS) = 0.8 A
VDRM / VRRM = 600 V
IGT = 30 to 200 µA
Applications
Limited gate current topologies
Ground fault circuit interrupters
Overvoltage crowbar protection in power
supplies
Protection in electronic ballasts
Capacitive discharge ignitions
Ignitors (lighting, oven...)
Description
The X006 SCR can be used as on/off function in
applications where topology does not offer high
current for gate triggering.
This device is optimized in forward voltage drop
and inrush current capabilities for reduced power
losses and high reliability in harsh environments.
A
G
K
KGA
TO-92
(X00619-MA)
Table 1. Device summary
IT(RMS)
0.8 A
VDRM / VRRM
600 V
IGT 30 to 200 µA
May 2009
Doc ID 15755 Rev 1
1/7
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1 Characteristics
X00619
Table 2.
Symbol
Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TL = 85 °C
TL = 85 °C
tp = 8.3 ms
Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
F = 60 Hz Tj = 125 °C
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
0.8 A
0.5 A
10
A
9
0.4 A2s
50 A/µs
1
0.1
- 40 to + 150
- 40 to + 125
A
W
°C
Table 3.
Symbol
Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 125 °C
MIN.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
Value
30
200
0.8
0.2
5
5
6
40
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics (per diode)
Symbol
Test conditions
VTM ITM = 1 A, tp = 380 µs
VTO Threshold voltage
Rd Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX
Value
1.35
0.85
245
1
100
Unit
V
V
mΩ
µA
µA
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Characteristics
Table 5. Thermal resistances
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient (DC)
Junction to lead (DC)
Parameter
Value
150
70
Unit
°C/W
Figure 1.
Maximum average power
dissipation vs. average
on-state current
Figure 2. Average and DC on-state current
vs. case temperature
P(W)
0.6
α = 180°
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
IT(AV)(A)
0.2 0.3
0.4
360°
α
0.5 0.6
IT(AV)(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
D.C.
α = 180°
Tl(°C)
50 75
100 125
Figure 3. Average and DC on-state current
vs. case temperature
IT(AV)(A)
1.0
0.9
D.C.
0.8
0.7
0.6
α = 180°
0.5
0.4
0.3
0.2
0.1
0.0
0
25
SCU = 0.5 cm2
Tamb(°C)
50 75
100 125
Figure 4.
Relative variation of thermal
impedance junction to ambient vs.
pulse duration
Zth(j-a)/Rth(j-a)
1.00
SCU = 0.5 cm2
0.10
0.01
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
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X00619
Figure 5.
Relative variation of gate trigger,
holding and latching current vs.
junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.6
1.4 Typical values
1.2
1.0
IH & IL
0.8
0.6 IGT
0.4
0.2
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 6.
Relative variation of holding
current vs. gate-cathode resistance
(typical values)
IH[RGK] / IH[RGK=1kΩ]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-02
1.E-01
RGK(kΩ)
1.E+00
1.E+01
1.E+02
Figure 7.
Relative variatiohn of dV/dt
immunity vs. gate-cathode
resistance (typical values)
dV/dt[RGK] / dV/dt[RGK=1kΩ]
100.0
VD = 0.67 x VDRM
Figure 8.
Relative variation of dV/dt immunity
vs. gate-cathode capacitance
(typical values)
dV/dt[CGK] / dV/dt[RGK=1kΩ]
100
VD = 0.67 x VDRM
RGK = 1kΩ
10.0
1.0
10
0.1
1.0E-01
RGK(kΩ)
1.0E+00
1.0E+01
1
1
CGK(nF)
10
Figure 9. Surge peak on-state current vs.
number of cycles
ITSM(A)
10
9
8
7
6
5
4 Repetitive
TC=25°C
3
2
1
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
tp=10ms
One cycle
1000
Figure 10. Non repetitive surge peak on state
current for a sinusoidal pulse and
corresponding value of I2T
ITSM(A), I2t (A2s)
1.E+02
Tj initial = 25°C
ITSM
1.E+01
1.E+00
1.E-01
0.01
tp(ms)
0.10
I2t
1.00
10.00
4/7 Doc ID 15755 Rev 1



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