WFW20N50 Datasheet PDF - Wisdom

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WFW20N50
Wisdom

Part Number WFW20N50
Description N-Channel MOSFET
Page 7 Pages


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Wisdom Semiconductor
WFW20N50
N-Channel MOSFET
Features
RDS(on) (Max 0.26 )@VGS=10V
Gate Charge (Typical 90nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
TO-247
{ 2. Drain
◀▲
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
20
13
80
±30
1110
25.0
4.5
250
2.00
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.50
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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WFW20N50
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
gfs Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 10A
VDS =50V , ID =10.0A
VGS =0 V, VDS =25V, f = 1MHz
VDD =250V, ID =20.0A, RG =25
(Note 4, 5)
VDS =400V, VGS =10V, ID =20.0A
(Note 4, 5)
Min
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 4.0
0.21 0.26
15 -
V
S
3350
490
50
-
-
-
pF
60 -
210 -
170 -
130 -
90 -
20 -
42 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =20.0A, VGS =0V
trr
NOQTrEr S
Reverse Recovery Time
Reverse Recovery Charge
IS=20.0A, VGS=0V, dIF/dt=100A/us
1. Repeativity rating : pulse width limited by junction temperature
2. L = 5.0mH, IAS =20.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 20.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
370
380
Max.
20
80
1.4
-
-
Unit.
A
V
ns
nC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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Typical Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom: 5.5V
100
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8
VGS = 10V
0.6 VGS = 20V
0.4
0.2
Note : TJ = 25
0.0
0
10 20 30 40 50 60 70 80
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
1000
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
0
150
25
-55
Notes :
1. VDS = 50V
2. 250µ s Pulse Test
2468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
Note : ID = 20 A
0
0 10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1.
2.
IVDG=S =2500VµA
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102 is Limited by R DS(on)
10 µs
100 µs
1 ms
101 10 ms
DC
100
10-1
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 10.0 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
20
16
12
8
4
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sing le pulse
N otes :
1 . Z θ J C( t) = 0 .5 0 /W M a x .
2. D uty F actor, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
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