W01M Datasheet PDF - SEP ELECTRONIC

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W01M
SEP ELECTRONIC

Part Number W01M
Description 1.5A Single-Phase Silicon Bridge Rectifier
Page 2 Pages


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SEP ELECTRONIC CORP.
W005M thru W10M
1.5 A Single-Phase Silicon Bridge Rectifier
Rectifier Reverse Voltage 50 to 1000V
WOB
8.85+0.5
Features
5.30+0.3
This series is UL listed under the Recognized
Component Index, file number E142814
The plastic material used carries Underwriters Laboratory
flammability recognition 94V-0
Ideal for printed circuit board mounting
High surge current capability
High temperature soldering guaranteed 265 C /10
seconds at 5 lbs (2.3kg) tension
26.0 MIN.
23.5 MIN.
5.1+0.5
Mechanical Data
Case: Reliable low cost construction utilizing
molded plastic technique
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
Mounting Position: Any
Weight: 0.05 ounce, 1.3 grams (approx)
5.1+0.5
Dimensions in millimeters(1mm =0.0394")
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
Parameter
Symbol W005M W01M W02M W04M W06M W08M W10M unit
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS bridge input voltage
VRMS 35
70 140 280 420 560 700 V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified
output current at TA=25 C
IF(AV)
1.5
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing ( t<8.3ms)
IFSM
I2t
50 A
10 A2sec
Typical thermal resistance per element (1)
RthJA
50.0
C/W
Typical junction capacitance per element (2)
Operating junction and storage temperature
range
Cj
TJ,
TSTG
24
-55 to + 150
pF
C
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
Parameter
Symbol W005M W01M W02M W04M W06M W08M W10M Unit
Maximum instantaneous forward voltage drop
per leg at 1.5A
VF
1.1 V
Maximum DC reverse current at rated TA =25 C
DC blocking voltage per element TA =100 C
IR
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.
10
1000
A
2006 SEP ELECTRONIC CORP.
www.sep-semi.com Rev.1



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Rating and Characteristic Curves ( TA=25 C Unless otherwise noted )
W005M thru W10M
Fig. 1 Derating Curve for
Output Rectified Current
1.5
60Hz Resistive of
Inductive Load
1.0
0.5
0
40 60 80 100 120 140
Case Temperature, C
Fig. 3 Typical Instantaneous
Forward Characteristics
10
1.0
0.1
Tj=25 C
Pulse Width=300us
.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward
Voltage, Volts
Fig. 2 Maximum Non-repetitive Peak
Forward Surge Current
60
8.3ms
50 Single half-sine-Wave
[JEDEC Method]
40
30
20
10
0
1 10 100
Number of Cycles at 60Hz
Fig. 4 Typical Reverse
Characteristics
100
Tj=125 C
10
1.0
Tj=25 C
0.1
.01
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse
Voltage, %
Fig. 5 Typical Junction Capacitance
100
Tj=25 C
f=1.0MHz
10
1 10 100
Reverse Voltage, Volts
2006 SEP ELECTRONIC CORP.
www.sep-semi.com Rev.1



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