W01M Datasheet PDF - Eris

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W01M
Eris

Part Number W01M
Description SILICON Bridge Rectifiers
Page 2 Pages


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W005M thru W10M
.181(4.6)
.150(3.8)
.386(9.8)
.354(9.0)
SILICON Bridge Rectifiers
1.083
(27.5)
MIN
0.921
(23.4)
MIN
POS.
LEAD
.032(0.81)
.028(0.71)
.220(5.6)
.180(4.6)
.220(5.6)
.180(4.6) SPACING
WOBM
Dimensions in inches and (millimeters)
Features
Surge overload rating -50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
technique results in expensive product
Mounting position:Any
PRIMARY CHARACTERISTICS
IF
VRRM
1.5A
50~1000V
IFSM
50A
VF 1.1V
TJ max
150°C
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL W005M W01M W02M W04M W06M W08M W10M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
@TA=25oC
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
IF 1.5 A
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load
IFSM
50.0
A
Maximum Forward Voltage Drop Per Element at
1.5A Peak
VF
1.1 V
Maximum DC Reverse Current @ TJ=25°C
at Rated DC Blocking Voltage @ TJ=100°C
I2t Rating for Fusing (t8.3ms)
Operating Temperature Range
Storage Temperature Range
IR
I2t
TJ
TSTG
10.0
1.0
5.0
-55 to +150
-55 to +150
uA
mA
A2s
°C
°C
Revision: B01
www.eris.com.tw



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W005M thru W10M
SILICON Bridge Rectifiers
FIG.1-MXIMUM NON-REPETITIVE
SURGE CURRENT
50
40
30
20
Pulse Wldth 8.3ms
10
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0
12
5 10 20
50
NUMBER OFCYCLES AT 60Hz
100
1.5
0
FIG.2-DERATING CURVE
OUTPUT RECTIFIED CURRENT
50 100
AMBIENT TEMPERATURE ,°C
150
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
TJ=25°C
10.0
TYPICAL
DISTRIBUTION
1.0
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE. VOLTS
FIG.4-TYPIACL REVERSE
CHARACTERISTICS
10
1.0
TJ=25°C
0.1
0.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE
Revision: B01
www.eris.com.tw



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