VS-6TQ045PbF Datasheet PDF - Vishay

www.Datasheet-PDF.com

VS-6TQ045PbF
Vishay

Part Number VS-6TQ045PbF
Description Schottky Rectifier
Page 7 Pages


VS-6TQ045PbF datasheet pdf
Download PDF
VS-6TQ045PbF pdf
View PDF for Mobile

No Preview Available !

www.vishay.com
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
Vishay Semiconductors
Schottky Rectifier, 6 A
Base
cathode
2
TO-220AC
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AC
6A
35 V, 40 V, 45 V
0.53 V
7 mA at 125 °C
175 °C
Single die
8 mJ
FEATURES
• 175 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-6TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM tp = 5 μs sine
VF 6 Apk, TJ = 125 °C
TJ Range
VALUES
6
35 to 45
690
0.53
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
VR
VRWM
VS-
6TQ035PbF
35
VS-
6TQ035-N3
35
VS-
6TQ040PbF
40
VS-
6TQ040-N3
40
VS-
6TQ045PbF
45
VS-
6TQ045-N3
UNITS
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 164 °C, rectangular waveform
6
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
690
140
8
1.20
UNITS
A
A
mJ
A
Revision: 29-Aug-11
1 Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

www.vishay.com
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
6A
12 A
6A
12 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.60
0.73
0.53
0.64
0.8
7
0.35
18.23
400
8
10 000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC
VALUES
- 55 to 175
UNITS
°C
2.2
0.50
°C/W
2g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
6TQ035
6TQ040
6TQ045
Revision: 29-Aug-11
2 Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

www.vishay.com
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
Vishay Semiconductors
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
0.001
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
TJ = 25 °C
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
1 10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
Revision: 29-Aug-11
3 Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

www.vishay.com
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
Vishay Semiconductors
180
175
170 DC
165
Square wave (D = 0.50)
160 80 % rated VR applied
155
See note (1)
150
0123456789
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
5
D = 0.20
D = 0.25
4 D = 0.33
D = 0.50
D = 0.75
3
RMS limit
2
DC
1
0
0123456789
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition and
with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current
monitor
L
IRFP460
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-Aug-11
4 Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-6TQ045PbF datasheet pdf
Download PDF
VS-6TQ045PbF pdf
View PDF for Mobile


Related : Start with VS-6TQ045Pb Part Numbers by
VS-6TQ045PbF Schottky Rectifier VS-6TQ045PbF
Vishay
VS-6TQ045PbF pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact