VS-40CTQ150-N3 Datasheet PDF - Vishay

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VS-40CTQ150-N3
Vishay

Part Number VS-40CTQ150-N3
Description Schottky Rectifier
Page 6 Pages


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VS-40CTQ150PbF, VS-40CTQ150-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base 2
common
cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 20 A
150 V
0.71 V
15 mA at 125 °C
175 °C
Common cathode
1.0 mJ
FEATURES
• 175 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM tp = 5 μs sine
VF 20 Apk, TJ = 125 °C (per leg)
TJ
VALUES
40
150
1500
0.71
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-40CTQ150PbF VS-40CTQ150-N3
150 150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 140 °C, rectangular waveform
VALUES
20
40
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1500
250
1.0
1.5
UNITS
A
mJ
A
Revision: 26-Aug-11
1 Document Number: 94214
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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VS-40CTQ150PbF, VS-40CTQ150-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
20 A
40 A
TJ = 25 °C
20 A
40 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.93
1.16
0.71
0.85
50
15
450
8.0
10 000
UNITS
V
µA
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthJC
DC operation
See fig. 4
DC operation
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style TO-220AB
VALUES
- 55 to 175
UNITS
°C
1.5
0.75 °C/W
0.5
2g
0.07 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40CTQ150
Revision: 26-Aug-11
2 Document Number: 94214
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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VS-40CTQ150PbF, VS-40CTQ150-N3
Vishay Semiconductors
100
TJ = 175 °C
10 TJ = 125 °C
TJ = 25 °C
1
0 0.4 0.8 1.2 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
1000
100
10
1
0.1
0.01
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
0 20 40 60 80 100 120 140 160
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
TJ = 25 °C
100
10
0
40 80 120 160
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
100
Revision: 26-Aug-11
3 Document Number: 94214
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

www.vishay.com
VS-40CTQ150PbF, VS-40CTQ150-N3
Vishay Semiconductors
180
160 DC
140
Square wave (D = 0.50)
120 80% VR applied
See note (1)
100
0
5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10 000
At any rated load condition
and with rated VRRM applied
following surge
25
20 RMS limit
DC
15
DC = 0.20
10 DC = 0.25
DC = 0.33
DC = 0.50
5 DC = 0.75
0
0 5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
Revision: 26-Aug-11
4 Document Number: 94214
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-40CTQ150-N3 datasheet pdf
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Vishay
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