V07G Datasheet PDF - Hitachi

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V07G
Hitachi

Part Number V07G
Description CONTROLLED AVALANCHE DIODE
Page 4 Pages


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CONTROLLED AVALANCHE DIODE
V07
FEATURES
Transient surge voltage protection.
Diffused-junction. Glass passivated and
encapsulated.
OUTLINE DRAWING
Direction of polarity
Unit in mm(inch)
φ 0.8
(0.03)
Type
V07E (400V)
V07G (600V)
V07J (800V)
Color of
cathode band
Blue
Red
Green
Weight: 0.35 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Type
V07E
V07G
V07J
Repetitive Peak Reverse Voltage
Peak Reverse Power
VRRM
PRM
V
W
400 600 800
40( Tj = 165°C,Pulse duration 1ms Non-repetitive )
Average Forward Current
IF(AV)
A
( )Single-phase half sine wave 180° conduction
1.3 TL=90°C, Lead length = 10mm
Surge(Non-Repetitive) Forward Current
I2t Limit Value
IFSM
I2t
A
A2s
40( Without PIV, 10ms conduction, Tj = 175°C start )
6.4( Time = 2 ~ 10ms, I = RMS value )
Operating Junction Temperature
Tj °C
-65 ~ +175
Storage Temperature
Tstg °C
-65 ~ +200
Notes (1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Items
Symbols Units Min. Typ. Max.
Test Conditions
Peak Reverse Current
Peak Forward Voltage
IRRM µA - 0.6 10 All class, Rated VRRM
VFM
V
-
-
1.1
IFM=1.3Ap, Single-phase half sine
wave 1 cycle
Reverse Recovery Time
trr µs - 3.0 - IF=2mA, VR=-15V
Avalanche Voltage
Steady State Thermal Impedance
VAVL
Rth(j-a)
Rth(j-l)
V
VRRM
-
1600
IRM=1.0mA, Single-phase half sine
wave 1 pps, Time 5s
°C/W
-
-
80
Lead length = 10 mm
50
PDE-V07-0
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V07
Forward characteristics
100
10 TL=175˚C
Single-phase half sine wave
Conduction : 10ms 1 Cycle
TL=25˚C
1
0.10
1234567
PEAK FORWARD VOLTAGE DROP (V)
Max. allowable ambient temperature
(Resistive or inductive load)
180
Single-phase half sine wave
180˚ conduction (50Hz)
160
140
120
100
80
60
40
20
00
LL
Lead length
L=10mm
20mm
25mm
PC board (100x180x1.6t)
Copper foil ( 5.5)
0.2 0.4 0.6 0.8 1.0 1.2
AVERAGE FORWARD CURRENT (A)
1.4
Max. average forward power dissipation
(Resistive or inductive load)
2.4
2.0
DC
1.6 Single-phase
( 50Hz )
1.2
0.8
0.4
0 0 0.4 0.8 1.2 1.6 2.0 2.4
AVERAGE FORWARD CURRENT (A)
Max. allowable lead temperature
(Resistive or inductive load)
180
160
Single-phase half sine wave
180˚ conduction (50Hz)
140
Lead length
120 L=10mm
20mm
25mm
100
80
60 L L
40
Lead temp PC board
20 (100x180x1.6t)
Copper foil ( 5.5)
0 0 0.2 0.4 0.6 0.8 1.0 1.2
AVERAGE FORWARD CURRENT (A)
1.4
Surge forward current characteristic
(Non-repetitive)
50
Surge current
peak value
10ms
40 1 cycle
30
Without PIV
20
With PIV
10
Typ. Reverse current vs. junction temperature
500
Note : at VRRM
100
10
1
01
10
100
0.10
50 100 150 200
CYCLES
JUNCTION TEMPERATURE (˚C)
PDE-V07-0
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V07
Steady-state thermal impedance
140
120
100 Rth(j - a)
80
60
40
20
0
0
Rth(j - l)
Ambient temp. measured point
Lead
length
2
Lead temp.
measured poin
(φ0.5 thermocouple)
Copper foil ( 5.5)
Lead PC board
length (100×180×1.6t)
10 20
LEAD LENGTH (mm)
30
Transient thermal impedance
200
Lead length = 10 mm
100
10
Rth(j - a)
Rth(j - l)
1
0.1
0.001 0.01
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
0.1 1
TIME (s)
10 100
Typical reverse power characteristic
(Non-repetitive)
400
100
Tj=165˚C
Reverse recovery time ( trr ) test circuit
- 15V
22µs
50µF
D.U.T
2mA
15V
0
600
Irp
trr
t
0.1Irp
10
0.01
0.1
1
RECTANGULAR PULSE DURATION (ms)
10
PDE-V07-0
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HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
„ For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
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