GaAs HBT INTEGRATED CIRCUIT
L-BAND VCO LOCAL BUFFER AMPLIFIER
The µPG2304TK is GaAs HBT MMIC for VCO local buffer amplifier which were developed for mobile phone and
another L-band application.
This device realizes excellent performance by using InGaP HBT. This device is housed in a 6-pin lead-less
minimold package (1511). And this package is able to high-density surface mounting.
• Operation frequency
: fopt1 = 679 to 768 MHz (720 MHz TYP.)
: fopt2 = 1 270 to 1 371 MHz (1 320 MHz TYP.)
• Supply voltage
: VCC = 2.7 to 2.9 V (2.8 V TYP.)
• Low current consumption
: ICC = 3.5 mA TYP.@ VCC = 2.8 V
• Excellent isolation
: ISL1 = 40 dB TYP. @ fopt1 = 720 MHz, Pin = −4 dBm, VCC = 2.8 V
: ISL2 = 35 dB TYP. @ fopt2 = 1 320 MHz, Pin = −4 dBm, VCC = 2.8 V
• High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
• VCO Buffer Amplifier etc.
6-pin lead-less minimold
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2304TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10162EJ01V0DS (1st edition)
Date Published May 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002