U16NB50 Datasheet PDF - STMicroelectronics

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U16NB50
STMicroelectronics

Part Number U16NB50
Description STU16NB50
Page 6 Pages


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STU16NB50
TYPE
ST U16 NB5 0
N-CHANNEL 600V - 0.45- 10.7A - Max220
PowerMESHMOSFET
PRELIMINARY DATA
VDSS
500 V
RDS(on)
< 0.33
ID
15.6 A
s TYPICAL RDS(on) = 0.4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
Value
Un it
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
500
500
± 30
15.6
9.8
62
160
1.28
V
V
V
A
A
A
W
W /o C
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
4.5
-65 to 150
150
( 1) ISD 16A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
December 1998
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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