U130A Datasheet PDF - Fairchild Semiconductor

www.Datasheet-PDF.com

U130A
Fairchild Semiconductor

Part Number U130A
Description Advanced Power MOSFET
Page 7 Pages


U130A datasheet pdf
Download PDF
U130A pdf
View PDF for Mobile


No Preview Available !

Advanced Power MOSFET
IRFR/U130A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.092 (Typ.)
BVDSS = 100 V
RDS(on) = 0.11
ID = 13 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
13
8.2
52
+_ 20
225
13
4.1
6.5
2.5
41
0.32
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.08
50
110
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation



No Preview Available !

IRFR/U130A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- -- V VGS=0V,ID=250 µA
-- 0.11 -- V/ ΟC ID=250µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µ A
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
-- -- 100 µ A VDS=80V,TC=125ΟC
-- -- 0.11 VGS=10V,ID=6.5A
O4
-- 9.25 --
VDS=40V,ID=6.5A
O4
-- 610 790
-- 150 175 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 62 72
-- 13 40
-- 14 40
VDD=50V,ID=14A,
-- 55 110 ns RG=12
See Fig 13
-- 36 80
O4 O5
-- 27 36
-- 4.5 --
-- 12.8 --
VDS=80V,VGS=10V,
nC ID=14A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 13
-- 52
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=13A,VGS=0V
-- 109 --
-- 0.41 --
ns TJ=25ΟC ,IF=14A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=2mH, IAS=13A, VDD=25V, RG=27 , Starting TJ =25 oC
O3 ISD <_ 14A, di/dt <_ 350A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature



No Preview Available !

N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
101
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
0.15 VGS = 10 V
0.10
0.05
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
15 30 45
ID , Drain Current [A]
60
Fig 5. Capacitance vs. Drain-Source Voltage
1000
C iss
750
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C oss
500
C rss
250
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFR/U130A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. V = 0 V
GS
2. VDS = 40 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
2.2
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID = 14.0 A
0
0 5 10 15 20 25 30
QG , Total Gate Charge [nC]



No Preview Available !

IRFR/U130A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. V = 10 V
0.5 GS
2. ID = 7.0 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
102
101
100
10-1
100
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by RDS(on)
100 µs
1 ms
10 ms
DC
10 µs
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
VDS , Drain-Source Voltage [V]
102
Fig 10. Max. Drain Current vs. Case Temperature
15
12
9
6
3
0
25 50 75 100 125 150
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
D=0.5
100
0.2
0.1
0.05
10- 1 0.02
0.01
single pulse
@ Notes :
1. Z (t)=3.08 o C/W Max.
θJ C
2. Duty Factor, D=t1 /t2
3. TJ M-TC =PD M *ZθJ C (t)
PDM
t1
t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101



U130A datasheet pdf
Download PDF
U130A pdf
View PDF for Mobile


Related : Start with U130 Part Numbers by
U130A Advanced Power MOSFET U130A
Fairchild Semiconductor
U130A pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact