TYN058 Datasheet PDF - STMicroelectronics

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TYN058
STMicroelectronics

Part Number TYN058
Description Silicon controlled rectifiers
Page 17 Pages


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TN805, TN815, TS820, TYN608
Sensitive and standard 8 A SCRs
A
A
K
G
TO-220AB
G
A
K
A
TO-220FPAB
G
A
K
A
KA
G
IPAK
KA
G
TO-220AB
A
KA
G
DPAK
Features
On-state rms current, IT(RMS) 8 A
Repetitive peak off-state voltage, VDRM/VRRM
600 and 800 V
Triggering gate current, IGT 0.2 to 15 mA
Datasheet - production data
Description
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8 A SCR
series is suitable to fit all modes of control found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
Table 1. Device summary
Order code
Voltage (x00)
VDRM/VRRM
Sensitivity
Package
IGT
600 V 800 V
TS820-600B X
0.2 mA DPAK
TS820-600H X
0.2 mA
IPAK
TS820-600T X
0.2 mA
TO-
220AB
TS820-600FP X
0.2 mA
TO-
220FPA
B
TN805-600B X
5 mA
DPAK
TN815-x00B X X 15 mA DPAK
TYN608RG X
15 mA
TO-
220AB
May 2014
This is information on a product in full production.
DocID7476 Rev 8
1/17
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Characteristics
1 Characteristics
TN805, TN815, TS820, TYN608
Table 2. Absolute ratings (limiting values)
Value
Symbol
Parameter
TN805
Unit
TN815 TYN608
TS820
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
On-state rms current (180° conduction angle)
Tc = 110 °C
T0-220FPAB, Tc = 91 °C
Tc = 110 °C
Average on-state current (180° conduction angle)
T0-220FPAB, Tc = 91 °C
Non repetitive surge peak
on-state current
I2t value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state
current IG = 2 x IGT , tr 100 ns
F = 60 Hz
Tj = 125 °C
Peak gate current
tp = 20 µs
Tj = 125 °C
Average gate power dissipation
Tj = 125 °C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN8x5 and TYN608 only)
8
5
73
70
24.5
100
95
45
50
4
1
- 40 to + 150
- 40 to + 125
5
A
A
A
A2S
A/µs
A
W
°C
V
Table 3. Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TS820
Unit
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA ,, RGK = 1 kΩ
VD = 65% VDRM, RGK = 220 Ω
ITM = 16 A, tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM, RGK = 220 Ω
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/17
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TN805, TN815, TS820, TYN608
Characteristics
Table 4. Standard electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TN805 TN815 TYN608 Unit
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 100 mA , gate open
IG = 1.2 IGT
VD = 67% VDRM, gate open
ITM = 16 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj =125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
0.5
5
25
30
50
2
15
1.3
0.2
40
50
150
1.6
0.85
46
5
2
2
15
30
70
150
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Symbol
Table 5. Thermal resistance
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (DC)
Junction to ambient (DC)
DPAK, IPAK, TO-220AB
TO-220FPAB
S(1) = 0.5 cm2 DPAK
IPAK
TO-220AB, TO-220FPAB
1. S = Copper surface under tab
Value
1.3
4.6
70
100
60
Unit
°C/W
°C/W
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Average and DC on-state current
versus case temperature
P(W)
8
7 α = 180°
6
5
4
3
2
1
0
01
IT(AV)(A)
23
4
360°
α
5
IT(AV)(A)
10
9
D.C.
8
7
6
α = 180°
5
4
3
2
1
0
60
25
DPAK IPAK
TO-220AB
TO-220FPAB
Tcase(°C)
50 75
100
125
DocID7476 Rev 8
3/17
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Characteristics
TN805, TN815, TS820, TYN608
Figure 3. Average and DC on-state current
versus ambient temperature
IT(AV)(A)
2,5
D.C.
2,0
α = 180°
1,5
Recommended pad layout,
FR4 printed circuit board
TO-220AB
TO-220FPAB
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
1,0
0,5
0,0
0
DPAK
IPAK
25
Tamb(°C)
50 75
100
0.2
0.1
125 1E-3
tp(s)
1E-2
1E-1
1E+0
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 6. Relative variation of gate trigger
current and holding current versus junction
temperature for TS820
K=[Zth(j-a)/Rth(j-a)]
1.00
Recommended pad layout,
FR4 printed circuit board
0.10
DPAK
TO-220AB / IPAK
TO-220FPAB
tp(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.0
1.8
IGT
1.6
1.4
1.2
1.0
IH & IL
RGK = 1kΩ
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -20
0
20 40
60
80 100 120 140
Figure 7. Relative variation of gate trigger and Figure 8. Relative variation of holding current
holding current versus junction temperature versus gate-cathode resistance (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.4
2.2
2.0 IGT
1.8
1.6
1.4
1.2 IH & IL
1.0
0.8
0.6
0.4
0.2 Tj(°C)
0.0
-40 -20 0 20 40 60
TN8 and TYNx8
80 100 120 140
IH[RGK] / IH[RGK=1kΩ]
6.0
5.5 TS8
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
4/17
DocID7476 Rev 8



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