TSU65R950S1 Datasheet PDF - Truesemi

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TSU65R950S1
Truesemi

Part Number TSU65R950S1
Description N-Channel MOSFET
Page 9 Pages


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TSD65R950S1/TSU65R950S1
650V 4.5A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
700V @TJ = 150
• Typ. RDS(on) = 0.85Ω
• Ultra Low gate charge (typ. Qg = 15nC)
• 100% avalanche tested
TSD65R950S1
TSU65R950S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
650
4.5*
2.9*
12*
±30
46
1
0.2
15
37
0.8
-55 to +150
300
Value
3.41
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
Unit
/W
/W
/W
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Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
ID = 250µA, Referenced to
25
VDS = 650V, VGS = 0V
-TJ = 125
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
650
--
--
--
--
--
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
2.5
--
gFS Forward Trans conductance VDS = 40V, ID = 2.5A (Note 4) --
Rg
Gate resistance
f=1MHz,open drain
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 2.5A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 2.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 2.5A
trr
Reverse Recovery Time
VGS = 0V, IF = 2.5A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=1A, VDD=50V, Starting TJ=25
3. ISD≤4.5A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
© 2015 Truesemi Semiconductor Corporation
Typ
--
700
0.6
--
10
--
--
3.5
0.85
8
3.5
320
75
5
10
8
60
13
15
3
6
--
--
0.9
180
1.5
Max Unit
-- V
-- V
-- V/
1 µA
-- µA
100 nA
-100 nA
4.5 V
0.95 Ω
-- S
-- Ω
-- pF
-- pF
-- pF
-- ns
-- ns
-- ns
-- ns
-- nC
-- nC
-- nC
4.5 A
16 A
1.5 V
-- ns
-- µC
2
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Typical Performance Characteristics
Figure 1: On-Region Characteristics@25°C
Drain-source voltage VDS (V)
Figure 2: On-Region Characteristics@125°C
Figure 3:Power Dissipation
Figure 4: On-Resistance vs. Junction Temperature
TJ (°C)
Figure 5: Break Down vs. Junction
Temperature
© 2015 Truesemi Semiconductor Corporation
Figure 6: Body-Diode Characteristics
3
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Typical Performance Characteristics
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
Figure 9: Coss stored Energy
Figure 10 On-Resistance vs. Drain Current and Gate Voltage
TCASE (°C)
Figure 11: Avalanche energy
© 2015 Truesemi Semiconductor Corporation
TCASE (°C)
Figure 12: Current De-rating
4
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