TSP80R600S1 Datasheet PDF - Truesemi

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TSP80R600S1
Truesemi

Part Number TSP80R600S1
Description N-Channel MOSFET
Page 8 Pages


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TSP80R600S1
800V 9A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 850V @TJ = 150
• Typ. RDS(on) = 0.55Ω
• Ultra Low gate charge (typ. Qg = 35nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25)
TJ, TSTG
TL
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
800
9*
5.5*
26
±30
120
2
0.32
15
83
-55 to +150
300
Value
1.5
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Unit
/W
/W
/W
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Electrical Characteristics TC = 25unless otherwise noted
Symbol
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
gFS
Rg
Parameter
Conditions
Min Typ Max
Drain-Source Breakdown
Voltage
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
Breakdown Voltage
Temperature Coefficient
ID = 250µA, Referenced to
25
Zero Gate Voltage Drain
Current
VDS = 800V, VGS = 0V
TC = 25
-TC = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
800
--
--
--
--
--
850
0.6
--
10
--
--
--
--
1
--
100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5A
Forward Trans conductance VDS = 40V, ID = 9A
Gate resistance
f=1MHz,open drain
2.5 3.5
-- 0.55
4.5
0.6
-- 8
-- 4.5
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
-- 550
-- 140
-- 7
--
--
--
Unit
V
V
V/
µA
µA
nA
nA
V
Ω
S
Ω
pF
pF
pF
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 4.5A
RG = 20Ω(Note 4)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 4.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 4.5A
trr
Reverse Recovery Time
VGS = 0V, IF = 4.5A
Qrr Reverse Recovery Charge diF/dt =100A/µs
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, Starting TJ=25
3. ISD≤9A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
-- 15 -- ns
-- 10 -- ns
-- 110 --
ns
-- 9
-- ns
-- 35 -- nC
-- 3.8 -- nC
-- 4
-- nC
-- --
-- --
-- 0.9
-- 240
-- 3.1
9
16
1.5
--
--
A
A
V
ns
µC
2
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Typical Performance Characteristics
VDS(V)
Figure 1: On-Region Characteristics@25°C
VDS(V)
Figure 2: On-Region
Characteristics@125°C
Figure 3:Power Dissipation
Figure 4: On-Resistance vs. Junction Temperature
Figure 5: On-Resistance vs. Drain Current, Tj=125°C
© 2015 Truesemi Semiconductor Corporation
Figure 6: Body-Diode Characteristics
3
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Typical Performance Characteristics
Figure 7: Gate-Charge Characteristics
VDS (V)
Figure 8: Capacitance Characteristics
VDS (V)
Figure 9: Coss stored Energy
Figure 10: Maximum Forward Biased Safe
Operating Area ,Tc=25°C
Figure 11: Break Down vs. Junction Temperature
© 2015 Truesemi Semiconductor Corporation
Figure 12: Typical transfer characteristics
4
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TSP80R600S1 datasheet pdf
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