TSF18N50M Datasheet PDF - Truesemi

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TSF18N50M
Truesemi

Part Number TSF18N50M
Description N-Channel MOSFET
Page 9 Pages


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TSP18N50M/TSF18N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 18.0A,500V,Max.RDS(on)=0.30 Ω @ VGS =10V
• Low gate charge(typical 50nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TSP18N50M TSF18N50M
500
± 30
18 18*
10.8 10.8*
72 72*
990
23.5
4.5
235 38.5
1.88 0.3
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
TSP18N50M
0.53
0.5
62.5
TSF18N50M
3.3
--
62.5
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B2
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Electrical Characteristics TC=25 unless otherwise specified
Symbol
Parameter
Test Conditions
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 9.0A
Min Typ Max Units
2.0 -- 4.0 V
-- 0.24 0.30
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to
25
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
VDS = 500 V, VGS = 0 V
VDS = 400 V, TJ = 125
VGS = 30 V, VDS = 0 V
VGS =- 30 V, VDS = 0 V
Dynamic Characteristics
500
--
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 18.0A,
RG = 25 Ω
(Note 4,5)
VDS = 400 V, ID = 18.0A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 18.0A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS =18.0A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=5.5mH, IAS=18.0A, VDD=50V, RG=25 Ω,Starting TJ=25
3. ISD≤18.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
-- -- V
0.6 -- V/
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
2500
400
40
--
--
--
pF
pF
pF
70 --
190 --
100 --
100 --
50 --
14 --
22 --
ns
ns
ns
ns
nC
nC
nC
-- 18.0
-- 72.0
-- 1.5
550 --
5.5 --
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com



No Preview Available !

Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com



No Preview Available !

Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com



TSF18N50M datasheet pdf
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TSF18N50M pdf
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