TSD60R380S1 Datasheet PDF - Truesemi

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TSD60R380S1
Truesemi

Part Number TSD60R380S1
Description N-Channel MOSFET
Page 9 Pages


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TSD60R380S1
600V 10.6A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 650V @TJ = 150
• Typ. RDS(on) = 0.34Ω
• Ultra Low gate charge (typ. Qg = 38nC)
• 100% avalanche tested
TO-252
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
10.6
6.7
32
±30
210
1.8
0.32
15
83
1.5
-55 to +150
300
Value
1.5
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Unit
/W
/W
/W
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Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VGS = 0V, ID = 250µA,
TJ = 150
ID = 250µA, Referenced to
25
VDS = 600V, VGS = 0V
-TJ = 150
600
--
--
--
--
650
0.6
--
10
--
--
--
1
--
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
-- -- 100
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
-- -- -100
V
V
V/
µA
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
2.5 -- 4.5
-- 0.34 0.38
V
Ω
gFS Forward Trans conductance VDS = 40V, ID = 5.5A (Note 4)
Rg
Gate resistance
f=1 MHz, open drain
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400V, ID = 5.5A
RG = 20Ω(Note 4, 5)
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 5.5A
Qgs
Gate-Source Charge
VGS = 10V (Note 4, 5)
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 5.5A
trr
Reverse Recovery Time
VGS = 0V, IF = 5.5A
Qrr Reverse Recovery Charge diF/dt =100A/µs (Note 4)
-- 16
-- 3
-- 680
-- 240
-- 7
-- 15
-- 10
-- 110
-- 9
-- 38
-- 4
-- 4.2
-- --
-- --
-- 0.9
-- 270
-- 3.3
--
--
--
--
--
-­
-­
-­
-­
-­
-­
-­
11
30
1.5
--
--
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=1.8A, VDD=50V, Starting TJ=25
3. ISD≤10.6A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2015 Truesemi Semiconductor Corporation
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Typical Performance Characteristics
Power dissipation
Max. transient thermal impedance
Ptot =f(TC)
Safe operating area TC=25 ℃
ZthJC =f(tP)
Safe operating area TC=80 ℃
ID=f(VDS); TC=25 ; VGS > 7V;
D=0; parameter tp
© 2015 Truesemi Semiconductor Corporation
ID=f(VDS); TC=80 ; VGS > 7V;
D=0; parameter tp
3
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Typical Performance Characteristics
Typ. output
characteristics Tj=25
Typ. output
characteristics Tj=125
ID=f(VDS); Tj=25 ; parameter: VGS
ID=f(VDS); Tj=125 ; parameter: VGS
Typ. drain-source on-state resistance
Typ. drain-source on-state resistance
RDS(on)=f(ID); Tj=125 ;
parameter:VGS
© 2015 Truesemi Semiconductor Corporation
RDS(on)=f(Tj); ID=3.8 A; VGS=10 V
4
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TSD60R380S1 datasheet pdf
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