TSA23N50M Datasheet PDF - Truesemi

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TSA23N50M
Truesemi

Part Number TSA23N50M
Description N-Channel MOSFET
Page 7 Pages


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TSA23N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V
• Low gate charge(typical 70nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TC = 25
TC = 100
(Note 1)
(Note 2)
(Note 1)
(Note 3)
500
±30
23
15
92
1110
28
4.5
PD
Power Dissipation (TC = 25)
-Derate above 25
280
2.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.44
--
40
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
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Electrical Characteristics TJ=25 unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 11.5 A
2.0 -- 4.0
-- 0.21 0.26
V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to
25
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
VDS = 500 V, VGS = 0 V
VDS = 400 V, TJ = 125
VGS = 30 V, VDS = 0 V
VGS =- 30 V, VDS = 0 V
Dynamic Characteristics
500
--
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 23 A,
RG = 25 Ω
(Note 4,5)
VDS = 400 V, ID = 23 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 23 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 23 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=5.0mH, IAS=23A, VDD=50V, RG=25 Ω,Starting TJ=25
3. ISD≤23A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
-- -- V
0.5 -- V/
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
2700
400
40
--
--
--
pF
pF
pF
100 --
400 --
100 --
100 --
70 --
18 --
35 --
ns
ns
ns
ns
nC
nC
nC
-- 23
-- 92
-- 1.5
500 --
7.2 --
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com



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Typical Characteristics
Figure 3. On-Resistance Variation
Figure 4. Body Diode Forward Voltage
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com



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Typical Characteristics
Figure 11. Transient Thermal Response Curve
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com



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