TPCP8206 Datasheet PDF - Toshiba Semiconductor

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TPCP8206
Toshiba Semiconductor

Part Number TPCP8206
Description MOSFETs
Page 9 Pages


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MOSFETs Silicon N-Channel MOS (U-MOS)
TPCP8206
1. Applications
• Mobile Equipments
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 19 m(typ.) (VGS = 4.5 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPCP8206
1, 3: Source
2, 4: Gate
5, 6, 7, 8: Drain
PS-8
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
VDSS 20 V
VGSS
±12
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
(t = 5 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
ID
IDP
PD(1)
6.0 A
20
1.48 W
Power dissipation (per device for dual
operation)
(t = 5 s)
(Note 2), (Note 5) PD(2)
1.23
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
(t = 5 s)
(t = 5 s)
(Note 3), (Note 4)
(Note 3), (Note 5)
PD(1)
PD(2)
0.58
0.36
Single-pulse avalanche energy
Avalanche current
(Note 6)
EAS
IAR
23.4 mJ
6.0 A
Channel temperature
Storage temperature
Tch 150
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-11-14
Rev.2.0



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5. Thermal Characteristics
TPCP8206
Characteristics
Symbol Max Unit
Channel-to-ambient thermal resistance (single
operation)
(t = 5 s)
(Note 2), (Note 4) Rth(ch-a)(1)
84.4
/W
Channel-to-ambient thermal resistance (per device for
dual operation)
(t = 5 s)
(Note 2), (Note 5) Rth(ch-a)(2)
101.6
Channel-to-ambient thermal resistance (single
operation)
(t = 5 s)
(Note 3), (Note 4) Rth(ch-a)(1)
215.5
Channel-to-ambient thermal resistance (per device for
dual operation)
(t = 5 s)
(Note 3), (Note 5) Rth(ch-a)(2)
347.2
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
operation, power is supplied to only one of the two devices.)
Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
is evenly supplied to both devices.)
Note 6: VDD = 16 V, Tch = 25(initial), L = 0.5 mH, RG = 1 , IAR = 6.0 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-11-14
Rev.2.0



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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
VGS = ±12 V, VDS = 0 V
VDS = 20 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -12 V
VDS = 10 V, ID = 0.2 mA
VGS = 2.5 V, ID = 3.0 A
VGS = 4.5 V, ID = 3.0 A
Min
20
8
0.5
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min
TPCP8206
Typ. Max Unit
±0.1 µA
10
 V

1.2
27 35 m
19 24
Typ. Max Unit
630
47
144
4.6
11.8
5.9
23.3
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Test Condition
VDD 16 V, VGS = 5 V, ID = 6.0 A
Qgs1
Qgd
Min Typ. Max Unit
5.8 nC
1.3
1.1
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed) (Note 7)
IDRP
Diode forward voltage
VDSF IDR = 6.0 A, VGS = 0 V
Note 7: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
  20 A
  -1.2 V
3 2011-11-14
Rev.2.0



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7. Marking
TPCP8206
Fig. 7.1 Marking
4 2011-11-14
Rev.2.0



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