TPCP8109 Datasheet PDF - Toshiba Semiconductor

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TPCP8109
Toshiba Semiconductor

Part Number TPCP8109
Description MOSFETs
Page 9 Pages


TPCP8109 datasheet pdf
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MOSFETs Silicon P-Channel MOS (U-MOS)
TPCP8109
1. Applications
• Motor Drivers
• Mobile Equipment
2. Features
(1) Small, thin package
(2) Small gate charge: QSW = 5.8 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 40.3 m(typ.) (VGS = -10 V)
(4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(5) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TPCP8109
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
PS-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -40 V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
ID
-4.5 A
Drain current (pulsed)
(Note 1)
IDP
-18
Power dissipation
(t = 5 s)
(Note 2)
PD
1.96 W
Power dissipation
(t = 5 s)
(Note 3)
PD
0.94
Single-pulse avalanche energy
(Note 4)
EAS
46.2 mJ
Avalanche current
IAR -4.5 A
Channel temperature
(Note 5)
Tch
175
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-10-22
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5. Thermal Characteristics
Characteristics
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(t = 5 s)
(t = 5 s)
(Note 2)
(Note 3)
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = -25 V, Tch = 25 (initial), L = 2.369 mH, RG = 25 , IAR = -4.5 A
Note 5: Merely channel temperature is guaranteed 175 .
Storage temperature range is guaranteed as usual (-55 to 150 ).
TPCP8109
Symbol
Rth(ch-a)
Max
76.5
159.5
Unit
/W
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-10-22
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TPCP8109
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS VGS = -16/+10 V, VDS = 0 V
  ±10 µA
Drain cut-off current
IDSS
VDS = -40 V, VGS = 0 V
  -10
Drain-source breakdown voltage
V(BR)DSS ID = -10 mA, VGS = 0 V
-40   V
Drain-source breakdown voltage (Note 6) V(BR)DSX ID = -10 mA, VGS = 10 V
-30
Gate threshold voltage
Vth VDS = -10 V, ID = -1 mA
-2 -2.5 -3
Drain-source on-resistance
RDS(ON) VGS = -6 V, ID = -2.25 A
48 76.8 m
VGS = -10 V, ID = -2.25 A
40.3 52.3
Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VDS = -10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min Typ. Max Unit
810
85
130
8
25
33
126
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
Qg VDD -32 V, VGS = -10 V, ID = -4.5 A 18.0
nC
Qgs1
Qgd
QSW
3.0
4.6
5.8
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 7)
IDRP
Diode forward voltage
VDSF IDR = -4.5 A, VGS = 0 V
Note 7: Ensure that the channel temperature does not exceed 175 .
Min Typ. Max Unit
  -18 A
  1.2 V
3 2013-10-22
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7. Marking
TPCP8109
Fig. 7.1 Marking
4 2013-10-22
Rev.1.0



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