TPCP8010 Datasheet PDF - Toshiba Semiconductor

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TPCP8010
Toshiba Semiconductor

Part Number TPCP8010
Description MOSFETs
Page 9 Pages


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MOSFETs Silicon N-channel MOS (U-MOS)
TPCP8010
1. Applications
• Motor Drivers
• Mobile Equipment
2. Features
(1) Small, thin package
(2) Small gate charge : QSW = 4.9 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 19.1 m(typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(5) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TPCP8010
1,2, 3: Source
4: Gate
5, 6, 7, 8: Drain
PS-8
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
6A
Drain current (pulsed)
(Note 1)
IDP
24
Power dissipation
(t = 5 s)
(Note 2)
PD
1.96 W
Power dissipation
(t = 5 s)
(Note 3)
PD
0.95 W
Single-pulse avalanche energy
(Note 4)
EAS
33.4 mJ
Avalanche current
IAR 6 A
Channel temperature
(Note 5)
Tch
175
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-06-04
Rev.1.0



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5. Thermal Characteristics
Characteristics
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(t = 5 s)
(t = 5 s)
(Note 2)
(Note 3)
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = 24 V, Tch = 25(initial), L = 1 mH, RG = 25 , IAR = 6 A
Note 5: Merely Channel temperature is guaranteed 175.
Storage temperature range is guaranteed as usual (-55 to 150).
TPCP8010
Symbol
Rth(ch-a)
Rth(ch-a)
Max Unit
76.4 /W
158 /W
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2012-06-04
Rev.1.0



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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
V(BR)DSX
VGS = ±16 V, VDS = 0 V
VDS = 40 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
Min
40
20
Gate threshold voltage
Drain-source on-resistance
Vth
RDS(ON)
VDS = 10 V, ID = 0.5 mA
VGS = 6 V, ID = 3 A
VGS = 10 V, ID = 3 A
2
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1
Min
TPCP8010
Typ. Max Unit
±10 µA
10
 V

2.5 3
24 31.2 m
19.1 24.8
Typ. Max Unit
600
75
132
5.2
13
5.0
19
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Qg
Test Condition
VDD 32 V, VGS = 10 V, ID = 6 A
Qgs1
Qgd
QSW
Min Typ. Max Unit
13.1
nC
2.4
4.1
4.9
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed) (Note 6)
IDRP
Diode forward voltage
VDSF IDR = 6 A, VGS = 0 V
Note 6: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
  24 A
  -1.2 V
3 2012-06-04
Rev.1.0



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7. Marking
TPCP8010
Fig. 7.1 Marking
4 2012-06-04
Rev.1.0



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