TPCL4201 Datasheet PDF - Toshiba Semiconductor

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TPCL4201
Toshiba Semiconductor

Part Number TPCL4201
Description MOSFETs
Page 12 Pages


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MOSFETs Silicon N-Channel MOS (U-MOS)
TPCL4201
1. Applications
• Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) Small, thin package
(2) Low source-source on-resistance: RSS(ON) = 26 m(typ.) (VGS = 4.5 V)
(3) Low leakage current: ISSS = 10 µA (max) (VSS = 20 V)
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA)
(5) Common drain
3. Packaging and Internal Circuit
TPCL4201
1: Source 1
2: Gate 1
3: Gate 2
4: Source 2
ChipLGA
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Source-source voltage
VSSS
20
V
Gate-source voltage
VGSS
±12
Source current (DC)
(Note 1)
IS 6 A
Source current (pulsed)
(Note 1)
ISP 24
Power dissipation
(t = 10 s)
(Note 2), (Note 4)
PD
0.50 W
Power dissipation
(t = 10 s)
(Note 3), (Note 4)
PD
1.65 W
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2009-04
1 2014-03-05
Rev.3.0



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5. Thermal Characteristics
Characteristics
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(t = 10 s) (Note 2), (Note 4)
(t = 10 s) (Note 3), (Note 4)
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: Equal voltage applied to FET1 and FET2.
Symbol
Rth(ch-a)
Rth(ch-a)
TPCL4201
Max Unit
250 /W
75.8 /W
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-03-05
Rev.3.0



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TPCL4201
6. Safety Precautions
This section lists important precautions which users of semiconductor devices (and anyone else) should observe
in order to avoid injury to human body and damage to property, and to ensure safe and correct use of our products.
Please be sure that you understand the meanings of the labels and graphic symbols described below before you
move on to the detailed descriptions of the precautions, and comply with the precautions stated.
3 2014-03-05
Rev.3.0



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7. Electrical Characteristics
7.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Source cut-off current
Source-source breakdown
voltage
(Note 5)
(Note 5)
(Note 5)
Gate threshold voltage
(Note 5)
Source-source on-resistance (Note 6)
Symbol
Test Condition
IGSS
ISSS
V(BR)SSS
V(BR)SSX
Vth
RSS(ON)
VGS = ±12 V, VSS = 0 V
VSS = 20 V, VGS = 0 V
IS = 10 mA, VGS = 0 V
IS = 10 mA, VGS = -12 V
VSS = 10 V, IS = 200 µA
VGS = 2.5 V, IS = 3 A
VGS = 3.1 V, IS = 3 A
VGS = 4.0 V, IS = 3 A
VGS = 4.5 V, IS = 3 A
Min
20
8
0.5
28
24
21
19
7.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VSS = 10 V, VGS = 0 V, f = 1 MHz
See Figure 7.2.1.
Min
TPCL4201
Typ. Max Unit
±0.1 µA
10
 V

1.2
40 52 m
31 44
27 33
26 31
Typ. Max Unit
720
130
180
85
115
250
400
pF
ns
Fig. 7.2.1 Switching Time Test Circuit
7.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Total gate charge (gate-
source plus gate-drain)
Gate-source charge 1
(Note 5)
(Note 5)
Qg
Qgs1
VSS(PS) 16 V, VGS = 5 V, IS = 6 A
11.5
1.8
nC
7.4. Source-Source Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Diode forward voltage
(Note 7)
VSSF ISR = 3 A, VGS = 0 V
  -1.2 V
Note 5: FET1 is measured with the gate and source pins of FET2 shorted. FET2 is measured with the gate and source
pins of FET1 shorted.
Note 6: Measured with the indicated gate-to-source voltage (VGS) applied to both FET1 and FET2.
Note 7: FET1 is measured with 4.5 V applied between the gate and source pins of FET2. FET2 is measured with 4.5
V applied between the gate and source pins of FET1.
4 2014-03-05
Rev.3.0



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