TLSG210 Datasheet PDF - Vishay Siliconix

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TLSG210
Vishay Siliconix

Part Number TLSG210
Description Symbol LED in 2 x 5 mm Flat and Tinted Top-Diffused Package
Page 8 Pages


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TLS.210.
Vishay Semiconductors
Symbol LED in 2 x 5 mm Flat and Tinted Top-Diffused
Package
Red
Yellow
Green
Color
Type
TLSH210.
TLSY210.
TLSG210.
Technology
GaAsP on GaP
GaAsP on GaP
GaP on GaP
Angle of Half Intensity
±ö
50°
50°
50°
Description
This series was developed for use as compact surface
display.
It is housed in a 2x5 mm rectangular molded package.
This device has a flat tinted, top diffused package for
uniform brightness when used in panels.
The symbol LEDs are available in three bright colors:
high efficiency red, yellow and green.
Features
D Choice of three bright colors
D Uniform illumination
D Luminous intensity selected into groups
D Suitable for DC and pulse operation
D Flat light emitting surface
D Direct symbol indication is possible
D Yellow and green color categorized
D Wide viewing angle
96 11498
Applications
Status lights
Background illumination
Maintenance lights
Indicator of audio and visual equipment
Off / On indicator
Readout lights
Legend lights
Illumination of moving boards
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLSH210. ,TLSY210. ,TLSG210. ,
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
tp 10 ms
Tamb 65°C
t 5 s, 2 mm from body
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
6
30
1
100
100
–40 to +100
–55 to +100
260
350
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 83050
Rev. A3, 05-Oct-00
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TLS.210.
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
Red (TLSH210. )
Parameter
Test Conditions
Luminous intensity 1) IF = 10 mA
Dominant wavelength IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 mA
Junction capacitance VR = 0, f = 1 MHz
v1) in one Packing Unit IVMin./ IV Max. 0.5
Type Symbol Min Typ Max Unit
TLSH2100 IV
0.63 2
TLSH2101 IV
1 2.5
ld 640
lp 650
ϕ ±50
mcd
mcd
nm
nm
deg
VF 2 3 V
VR 6 15
V
Cj 50 pF
Yellow (TLSY210. )
Parameter
Test Conditions
Luminous intensity 1) IF = 10 mA
Dominant wavelength IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 mA
Junction capacitance VR = 0, f = 1 MHz
v1) in one Packing Unit IVMin./ IV Max. 0.5
Type Symbol Min Typ Max Unit
TLSY2100 IV 0.63 2
mcd
TLSY2101 IV
12
mcd
ld 581
594 nm
lp 585 nm
ϕ ±50 deg
VF
2.4 3
V
VR 6 15
V
Cj 50 pF
Green (TLSG210. )
Parameter
Test Conditions
Luminous intensity 1) IF = 10 mA
Dominant wavelength IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 mA
Junction capacitance VR = 0, f = 1 MHz
v1) in one Packing Unit IVMin./ IV Max. 0.5
Type Symbol Min Typ Max Unit
TLSG2100
TLSG2101
IV
IV
ld
lp
ϕ
12
mcd
1.6 2.5
mcd
562 575 nm
565 nm
±50 deg
VF
2.4 3
V
VR 6 15
V
Cj 50 pF
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Document Number 83050
Rev. A3, 05-Oct-00



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TLS.210.
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
0° 10 20
125 ° °
30°
100
75
50
25
0
0
95 10918
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
60
50
40
30
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
95 10082
Figure 4. Rel. Luminous Intensity vs.
Angular Displacement
1000
Red
100
tp/T=0.001
tp=10ms
10
20
10
0
0 20 40 60 80 100
95 10046
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
10000
1
0.1
0 2 4 6 8 10
96 11593
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
1.6
Red
1000 tp/T=0.01
0.1
100 0.2
0.5
1
10
0.02
0.05
1
0.01
0.1
vTamb 65°C
1 10
100
95 10079
tp – Pulse Length ( ms )
Figure 3. Forward Current vs. Pulse Length
1.2
0.8
0.4
0 IF=10mA
0 20 40 60 80 100
96 11594
Tamb – Ambient Temperature ( °C )
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83050
Rev. A3, 05-Oct-00
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TLS.210.
Vishay Semiconductors
2.4
Red
2.0
1.6
1.2
0.8
0.4
IFAV=10mA, const.
0
10 20
50 100 200
96 11595 1 0.5
0.2 0.1 0.05
500 IF(mA)
0.02 tp/T
Figure 7. Rel. Lumin. Intensity vs.
Forw. Current / Duty Cycle
10
Red
1
0.1
0.01
1
10 100
96 11596
IF – Forward Current ( mA )
Figure 8. Relative Luminous. Intensity vs.Forward. Current
1.2
Red
1.0
0.8
0.6
0.4
0.2
0
600
96 11597
620 640 660 680
l – Wavelength ( nm )
700
Figure 9. Relative Luminous. Intensity vs.Wavelength
1000
Yellow
100
10
tp/T=0.001
tp=10ms
1
0.1
0 2 4 6 8 10
95 10030
VF – Forward Voltage ( V )
Figure 10. Forward Current vs. Forward Voltage
1.6
Yellow
1.2
0.8
0.4
0 IF=10mA
0 20 40 60 80
95 10031
Tamb – Ambient Temperature ( °C )
100
Figure 11. Rel. Luminous Intensity vs
Ambient Temperature
2.4
Yellow
2.0
1.6
1.2
0.8
0.4
0
10
95 10260 1
20
0.5
50 100 200
0.2 0.1 0.05
500 IF(mA)
0.02 tp/T
Figure 12. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
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4 (7)
Document Number 83050
Rev. A3, 05-Oct-00



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