TK15A60U Datasheet PDF - Toshiba Semiconductor

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TK15A60U
Toshiba Semiconductor

Part Number TK15A60U
Description Field Effect Transistor Silicon N Channel MOS Type
Page 6 Pages


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TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMwOwSw.D)ataSheet4U.com
TK15A60U
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.)
High forward transfer admittance: Yfs= 8.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
±30
15
30
40
81
15
4
150
-55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
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Electrical Characteristics (Ta = 25°C)
TK15A60U
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Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
Turn-OFF time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7.5 A
VDS = 10 V, ID = 7.5 A
600
3.0
3.0
VDS = 10 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50 Ω
ID = 7.5A VOUT
RL =
40Ω
VDD ∼− 300 V
Duty 1%, tw = 10 μs
0.24
8.5
950
47
2300
37
80
8
105
±1
100
5.0
0.3
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
17
10 nC
7
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Marking
Min Typ. Max Unit
⎯ ⎯ 15 A
⎯ ⎯ 30 A
⎯ ⎯ -1.7 V
530
ns
9.0 ⎯ μC
K15A60U
Note 4: A dot marking for identifying the indication of product
Part No. (or abbreviation code)
Lot No.
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29



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10
Common source
Tc = 25°C
8 Pulse test
10
15
ID – VDS
8
6
4
2
7
6.8
6.5
6.2
6
VGS = 5.8 V
0
01 23 4 5
Drainsource voltage VDS (V)
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30
10
24 15
18
ID – VDS
8.5 Common source
Tc = 25°C
Pulse test
8
7.5
12 7
6.3
6
VGS = 6.2 V
0
0 10 20 30 40 50
Drainsource voltage VDS (V)
30
Common source
VDS = 20 V
24 Pulse test
ID – VGS
18
100
12
25 Tc = −55°C
6
0
0 2 4 6 8 10
Gatesource voltage VGS (V)
VDS – VGS
10
Common source
Tc = 25°C
Pulse test
8
6
4 ID = 15A
2 7.5
4
0
0
4
8
12 16
20
Gatesource voltage VGS (V)
100
Common source
VDS = 10 V
Pulse test
10
Yfs⎪ − ID
Tc = −55°C
100
25
1
10
Common source
Tc = 25°C
Pulse test
RDS (ON) ID
1
VGS = 10 V
15
0.1
0.1
0.1 1 10 100
Drain current ID (A)
0.01
1
3
10
Drain current ID (A)
100
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RDS (ON) – Tc
1
Common source
VGS = 10 V
Pulse test
0.8
0.6 7.5
15
0.4 ID = 4 A
0.2
0
80 40
0
40 80 120 160 200
Case temperature Tc (°C)
TK15A60U
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100
Common source
Tc = 25°C
Pulse test
IDR VDS
10
10,15
1
53
1 VGS = 0 V
0.1
0 0.4 0.8
Drainsource voltage VDS (V)
1.2
10000
1000
100
C – VDS
Ciss
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Pulse test
1
0.1
1
Crss
10 100
Drainsource voltage VDS (V)
Vth Tc
5
4
3
2
Common source
1 VDS = 10 V
ID = 1 mA
Pulse test
0
80 40
0
40
80 120 160
Case temperature Tc (°C)
200
PD Tc
50
40
30
20
10
0
0 40 80 120 160 200
Case temperature Tc (°C)
500
400 VDS
300
200
100
Dynamic input/output
characteristics
Common source 20
ID = 15 A
Tc = 25°C
Pulse test
16
200V
VDD = 100V
400V
12
VGS
8
4
00
0 6 12 18 24 30
Total gate charge Qg (nC)
4 2009-09-29



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