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Part Number

TIM7785-4UL

Manufacturer Toshiba Semiconductor
Short Description MICROWAVE POWER GaAs FET
Long Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB a

Datasheet : TIM7785-4UL



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