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| Part Number | TIM6472-35SL |
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| Manufacturer | Toshiba Semiconductor | |
| Short Description | MICROWAVE POWER GaAs FET | |
| Long Description | FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 8.0dB a |
Datasheet : TIM6472-35SL |
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