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Part Number

TIM5964-4UL

Manufacturer Toshiba Semiconductor
Short Description MICROWAVE POWER GaAs FET
Long Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB

Datasheet : TIM5964-4UL



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