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Part Number

TIM5359-45SL

Manufacturer Toshiba Semiconductor
Short Description MICROWAVE POWER GaAs FET
Long Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 9.0dB a

Datasheet : TIM5359-45SL



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