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Part Number

TIM1414-7

Manufacturer Toshiba Semiconductor
Short Description MICROWAVE POWER GaAs FET
Long Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN G1dB= 6.5dB

Datasheet : TIM1414-7



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