|
|
| Part Number | TIM1011-5L |
|
| Manufacturer | Toshiba Semiconductor | |
| Short Description | MICROWAVE POWER GaAs FET | |
| Long Description | FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB |
Datasheet : TIM1011-5L |
This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010 :: HOME :: Privacy Policy + Contact |